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Method of manufacturing nitride semiconductor laser

A technology of nitride semiconductors and manufacturing methods, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems that the film is easy to crack and the film is easy to be peeled off, and achieve the effect of reducing stress and reducing damage

Inactive Publication Date: 2009-06-24
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, distortion occurs in the nitride film dielectric film sputtered on the end face of the resonator, the film is easily peeled off, or problems such as cracks (crack) easily occur in the film, so it is necessary to form the film under precise control.

Method used

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  • Method of manufacturing nitride semiconductor laser
  • Method of manufacturing nitride semiconductor laser
  • Method of manufacturing nitride semiconductor laser

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Embodiment 2

[0038] Embodiment 2 is characterized in that: when an ECR sputtering device is used to form an adhesive layer on the end face of the resonator, the RF power applied to the sputtering target is set to 2 levels of power, and the low-speed film-forming stage and the high-speed film-forming stage are used. The multi-level growth rate of the film stage is used to form the cohesive layer. Other methods are the same as in Example 1.

[0039] Figure 4 is a cross-sectional view of a resonator of a nitride semiconductor laser according to Embodiment 2 of the present invention. Such as Figure 4 As shown in FIG. The second adhesive layer 42 of the film is composed of a nitride dielectric. On the surface of the second adhesion layer 42, a low-reflection end surface coating film 43 is formed.

[0040] In addition, on the end face 44 of the resonator on the light reflection side, a first adhesive layer 45 made of a nitride dielectric that does not contain Ar is formed, and formed on t...

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Abstract

The invention provides a high-reliability nitride semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. A method of manufacturing a nitride semiconductor laser according to the invention uses a nitride-based III-V compound semiconductor and includes the steps of (a) forming an adherence layer of a nitride dielectric on both a light-emitting and a light-reflecting end face of a resonator in plasma containing a nitrogen gas; and (b) forming a low-reflective and a high-reflective face-coating film of a dielectric on the adherence layers.

Description

technical field [0001] The present invention relates to a method of manufacturing a nitride semiconductor laser using a nitride III-V semiconductor. Background technique [0002] In traditional nitride III-V semiconductor lasers, an adhesive layer is formed between the end face of the resonator and the coating (coat) on the end face to suppress the degradation of the end face of the resonator by catastrophic optical damage. [0003] For example, there is a structure in which a separation layer made of aluminum nitride is formed between an end face of a resonator and an end face plated film made of aluminum oxide (for example, refer to Patent Document 1: JP 2007-103814 A). [0004] As described in Patent Document 1, a general method of forming a film on a resonator end surface by sputtering can increase the sputtering rate by using a gas with a large mass, so argon (Ar) gas is used as the sputtering gas. However, when Ar plasma composed of Ar gas irradiates the surface of th...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/028H01S5/10H01S5/223
CPCH01S5/0287H01S5/0222H01S5/0202H01S5/028H01S5/02224H01S5/3211H01S5/34333H01S5/02212H01S5/2201B82Y20/00H01S5/0282
Inventor 铃木洋介中川康幸臧本恭介白滨武郎
Owner MITSUBISHI ELECTRIC CORP