Method for cleaning sapphire substrate

Abstract

The invention relates to a method for cleaning a sapphire substrate, which comprises a step of organic solvent ultrasonic cleaning at normal temperature; and a step of soaking by acetone when heated. Through the implementation of the method for cleaning the sapphire substrate, a trichloroethylene reagent used in the prior cleaning method is removed, so environmental pollution is reduced and operators are prevented from being poisoned; and during cleaning, the ultrasonic cleaning and the heating cleaning are used to save time and improve the cleaning efficiency and the cleaning quality. The method has the advantages of simple technology and convenient operation, and meets the requirement of environmental protection.

Description

technical field [0001] The present invention relates to cleaning method, more specifically, relates to a kind of sapphire substrate cleaning method. Background technique [0002] For the production of LED chips, the selection of substrate materials is the primary consideration. Which kind of suitable substrate should be used needs to be selected according to the requirements of equipment and LED devices. At present, sapphire substrates are generally used in the market. Typically, epitaxial layers of GaN-based materials and devices are mainly grown on sapphire substrates. Sapphire substrates have many advantages: First, the production technology of sapphire substrates is mature and the device quality is good; second, sapphire has good stability and can be used in high temperature growth process; finally, sapphire has high mechanical strength and is easy to handle and cleaning. Therefore, most processes generally use sapphire as a substrate. In the traditional sapphire su...

AI Technical Summary

Problems solved by technology

In the traditional sapphire substrate cleaning method, toxic trichlorethylene is used for cleaning, which will not only cause personnel poisoning, but also pollute the environment; and because the cleaning time is long without using ultrasound during the operation, the cleaning efficiency is affected. And it needs to be cleaned at high temperature in a closed environment, generally at 125°C