Orthosilicate green phosphor for light emitting diode and preparation thereof

A green phosphor, light-emitting diode technology, applied in the field of radiation materials, can solve problems such as low luminous brightness

Inactive Publication Date: 2009-07-08
罗维鸿 +1
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  • Abstract
  • Description
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Problems solved by technology

[0019] The green phosphor mentioned by the inventor of this patent application in this patent also has the deficiency of low luminous brightness under blue light excitation

Method used

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  • Orthosilicate green phosphor for light emitting diode and preparation thereof
  • Orthosilicate green phosphor for light emitting diode and preparation thereof
  • Orthosilicate green phosphor for light emitting diode and preparation thereof

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Embodiment

[0116] First, it is clearly stated that the valence state of the sulfide ion is -2. The inventor confirmed that the lowest concentration of sulfide ions introduced is 4 mg / g, which changes the wavelength of the luminescent spectrum and reduces the luminous brightness by 2-4%.

[0117] For Se -2 The introduction of ions requires a long processing time (from 10-20 hours), which makes Eu +2 radiation wavelength shift.

[0118] Introduced ion S -2 and / or Se -2 , will change the activation ion Eu +2 The characteristics of the original Eu +2 The standard afterglow time is τ e = 160 nanoseconds, the S -2 Introduced into the composition of orthosilicate phosphor (to 0.002 atomic fraction), with the afterglow time reduced to τ e = 135 nanoseconds. Reductions like this are used to reduce phosphor usage at high current loads in light emitting diodes (LEDs). The numerical advantage of the phosphor powder of the present invention is changed in its composition, which is characteri...

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Abstract

The invention relates to the field of radiation materials, in particular to orthosilicate fluorescent powder. Part of O<-2> in a silanoxide tetrahedron is replaced, the orthosilicate fluorescent powder has a P2nn crystal structure and gives off green radiation under the strong shortwave radiation excitation of InGaN heterojunction, wherein the maximum spectrum depends on the interrelation between the amount of Me<+2> or Ln<+2, 3> in a cation crystal lattice, and the intensity is determined by the amount of the atom O<-2> in the component which is replaced in the V, the VI and the VII families and is taken from the series of F, Cl, Br, I, S, Se, N and P. The orthosilicate fluorescent powder has two excitation wave zones of which the range is between 360 and 400 nanometers and between 450 and 490 nanometers, and the materials are used for establishing a bright and effective green LED by using a nitride heterojunction as a substrate.

Description

technical field [0001] The present invention is related to the field of radiation materials, specifically, it is based on creating a semiconductor heterojunction derived from InGaN, which is called "Solid State Light" or semiconductor lighting technology in English. Background technique [0002] The solid-state light source or semiconductor lighting technology has developed rapidly in the last ten years, and the advantage of this semiconductor light source is that it adopts brighter and more effective light emission. The founder of this kind of InGaN heterojunction containing a large number of quantum wells as a novel structure light source is Japan. Research scholar S. Nakanura (S. Nakamura Blue Laser. Springer Verlag, Berlin 1997). [0003] Inorganic phosphors originating from the yellow spectral region, which are composed in the blue spectral region of the heterojunction InGaN radiation, are interconnected with polymers, and combine with the heterojunction blue radiation ...

Claims

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Application Information

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IPC IPC(8): C09K11/79C09K11/86C09K11/81C01B33/24H01L33/00
Inventor 索辛纳姆罗维鸿蔡绮睿
Owner 罗维鸿
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