Production method for thin-film transistor array substrate
A thin-film transistor and array substrate technology, which is applied in the manufacturing field of thin-film transistor array substrates, can solve problems such as high manufacturing cost, cumbersome 9-pass photomask process, and difficult yield control.
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no. 1 example
[0035] Figure 3A to Figure 3G It is a schematic diagram of the manufacturing process of a thin film transistor array substrate according to the first embodiment of the present invention. Please refer to Figure 3A As shown, firstly, a substrate 310 is provided, and the substrate 310 has a peripheral area 310a and an array area 310b. In addition, the substrate 310 can be a glass substrate, a quartz substrate or a plastic substrate. Then, a polysilicon layer 330 is formed on the substrate 310 .
[0036] In more detail, the step of forming the polysilicon layer 330 is, for example, first forming an amorphous silicon layer (not shown) on the substrate 310, and the method of forming the amorphous silicon layer is, for example, chemical vapor deposition (chemical vapor deposition, CVD) process or ion growth chemical vapor deposition (plasma enhanced CVD, PECVD) process. Then, a laser annealing process is performed on the amorphous silicon layer to transform the amorphous silico...
no. 2 example
[0052] Figure 4A to Figure 4E It is a schematic diagram of the manufacturing process of a thin film transistor array substrate according to the second embodiment of the present invention. Please refer to Figure 4A As shown, first, a substrate 310 is provided, and the substrate 310 has a peripheral region 310a and an array region 310b, and a plurality of first polysilicon islands 330a and a plurality of second polysilicon islands are formed on the substrate 310 330b and a plurality of third polysilicon islands 330c. Wherein, the first polysilicon island 330a and the second polysilicon island 330b are located on the peripheral area 310a, and the third polysilicon island 330c is located on the array area 310b. Next, a second patterned photoresist layer 420b is formed on the first, second and third polysilicon islands 330a, 330b, 330c by using a second half-tone photomask 410b, and the second patterned photoresist layer The resistive layer 420b covers the first polysilicon is...
no. 3 example
[0060] Figure 5A to Figure 5F It is a schematic diagram of the manufacturing process of a thin film transistor array substrate according to the third embodiment of the present invention. Please refer to Figure 5AAs shown, first, a substrate 310 is provided, and the substrate 310 has a peripheral region 310a and an array region 310b, and a plurality of first polysilicon islands 330a and a plurality of second polysilicon islands are formed on the substrate 310 330b and a plurality of third polysilicon islands 330c. Wherein, the first polysilicon island 330a and the second polysilicon island 330b are located on the peripheral area 310a, and the third polysilicon island 330c is located on the array area 310b. Similarly, a buffer layer 320 may be formed on the substrate 310 first, and then the first, second and third polysilicon islands 330a, 330b, 330c are formed. The methods and materials for forming the buffer layer 320 , the first, second and third polysilicon islands 330 ...
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