Copper linking wire and production method thereof

A copper bonding and blank technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of reducing the reliability of electronic components and substrate damage, and achieve the effects of low hardness, low radian, and avoiding oxidation.

Inactive Publication Date: 2009-07-22
HENAN YOUK ELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But for copper bonding wire, due to its high hardness, it is easy to cause substrate damage in large scale integrated circuit packaging
Compared with bonding gold wire, copper bonding wire has lively chemical properties and is easier to oxidize, which reduces the reliability of electronic components.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Embodiment 1: The weight percent of each component in the copper bonding wire material is 0.0008% for La, 0.001% for Ce, 0.002% for Ca, and 99.995% for Cu.

[0015] A method for preparing copper bonding wires, comprising the following steps:

[0016] a. Preparation of copper bonding wire blank, adopting directional solidification method to prepare copper bonding wire blank;

[0017] B, the prepared blank is drawn, and the drawing speed is 80m / min;

[0018] c. During the heat treatment process of the copper bonding wire, hydrogen with a purity greater than 99.999% and an inert gas with a purity greater than 99.999% are used to protect and brighten the copper bonding wire. The flow rate of the hydrogen gas is 0.6L / min, and the flow rate of the inert gas 1.0L / min;

[0019] d. Anti-oxidation treatment on the surface of the copper bonding wire. Use an antioxidant with a concentration of 0.05% to evenly coat the surface of the copper bonding wire with a coating thickness of...

Embodiment 2

[0021] Embodiment 2: The weight percentage of each component in the copper bonding wire material is 0.001% for La, 0.0015% for Ce, 0.0025% for Ca, and 99.994% for Cu;

[0022] A method for preparing copper bonding wires, comprising the following steps:

[0023] a. Preparation of copper bonding wire blank, adopting directional solidification method to prepare copper bonding wire blank;

[0024] b. Drawing the prepared blank, the drawing speed is 100m / min;

[0025] c. During the heat treatment process of the copper bonding wire, hydrogen with a purity greater than 99.999% and an inert gas with a purity greater than 99.999% are used to protect and brighten the copper bonding wire. The flow rate of the hydrogen gas is 0.75L / min, and the flow rate of the inert gas 1.15L / min;

[0026] d. Anti-oxidation treatment on the surface of the copper bonding wire. Use an antioxidant with a concentration of 1% to evenly coat the surface of the copper bonding wire with a coating thickness of ...

Embodiment 3

[0028] Embodiment 3: The weight percentage of each component in the copper bonding wire material is 0.0012% for La, 0.0018% for Ce, 0.003% for Ca, and 99.992% for Cu.

[0029] A method for preparing copper bonding wires, comprising the following steps:

[0030] a. Preparation of copper bonding wire blank, adopting directional solidification method to prepare copper bonding wire blank;

[0031] B, the prepared blank is drawn, and the drawing speed is 120m / min;

[0032] c. During the heat treatment process of the copper bonding wire, hydrogen with a purity greater than 99.999% and an inert gas with a purity greater than 99.999% are used to protect and brighten the copper bonding wire. The flow rate of the hydrogen gas is 0.85L / min, and the flow rate of the inert gas 1.35L / min;

[0033] d. Anti-oxidation treatment on the surface of the copper bonding wire. Use an antioxidant with a concentration of 1% to evenly coat the surface of the copper bonding wire with a coating thicknes...

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Abstract

The invention discloses a copper bonding wire and the weight percentages of components in the copper bonding wire are as follows: La accounts for 0.0008 to 0.002 wt percent, Ce accounts for 0.001 to 0.003 wt percent, Ca accounts for 0.002 to 0.004 wt percent, and Cu accounts for 99.99 to 99.995 percent. The copper bonding wire has low trajectory, low hardness and good oxidation resistance and avoids the oxidation of the copper bonding wire at normal temperature, so the copper wire can be stored for a long term at normal temperature, and the method can also meet the demand of high performance, multifunction, miniaturization and portable development of electronic packaging.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and mainly relates to a copper bonding wire with low radian, low hardness and good oxidation resistance. Background technique [0002] Compared with gold wire and aluminum wire, copper bonding wire has excellent mechanical properties, electrical properties, thermal properties and low growth of intermetallic compounds, which greatly improves chip frequency and reliability, and adapts to low-cost, fine-grained The development of spacing and high lead-out component packaging. The transition from aluminum metallization to copper metallization on wafers makes for new packaging designs for high-speed devices, choosing short copper wire bonding and copper pads with a pitch of less than 50 μm will become a strong competition for flip-chip soldering processes in the packaging market opponent. And through the improvement of the new process, the copper wire bonding is stronger and more sta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00
CPCH01L24/43H01L2224/43H01L2224/45H01L2224/45144H01L2224/45147H01L2224/4554H01L2224/85075H01L2924/01057H01L2924/01058H01L2924/0102H01L2924/01204H01L2924/00012H01L2924/00015H01L2924/01007
Inventor 吕长江吕长春
Owner HENAN YOUK ELECTRONICS MATERIALS
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