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Three-layer stereo power encapsulation method and structure

A packaging method and power technology, which is applied in the manufacture of semiconductor devices, electric solid devices, semiconductor/solid devices, etc., can solve the problems of power integration and packaging of IPM products, and achieve the effects of low cost, simplified production process, and easy welding

Inactive Publication Date: 2009-07-29
BEIJING RES INST OF AUTOMATION FOR MACHINERY IND
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  • Abstract
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  • Claims
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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a three-layer three-dimensional power packaging method and its structure, which is used to solve the problem that the power integration and packaging of IPM products cannot be carried out in the prior art

Method used

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  • Three-layer stereo power encapsulation method and structure
  • Three-layer stereo power encapsulation method and structure
  • Three-layer stereo power encapsulation method and structure

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Embodiment Construction

[0050] The technical solutions of the present invention will be further described in more detail in conjunction with the accompanying drawings and specific embodiments.

[0051] Such as figure 1Shown is the process flow diagram of the three-layer three-dimensional packaging method of the present invention. The method tightly installs the power board part, the drive control board part, and the power electrode part in a package from bottom to top, and the method includes the following steps:

[0052] Step S101, preparing the substrate of the power chip, the cooling plate and the power electrode;

[0053] In this step, design and process the copper heat sink and power electrodes according to the required size; design and process the ceramic copper clad board (DCB) as the mounting substrate of the power chip according to the layout requirements of the power device, such as Figure 2a , Figure 2b , Figure 2c , Figure 6, wherein 10 is a copper heat sink, 20 is a ceramic copper...

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Abstract

The invention discloses a three-layer three-dimensional power encapsulating method and a structure thereof, wherein the method comprises the following steps: step 1. a heating panel, a power electrode and a base plate are prepared and an insulating layer is respectively printed on the base plate and the heating panel to form a hollow picture and ensure the positions of a power chip and the power electrode on the base plate and the position of the base plate on the heating panel fill in the hollow picture; step 2. soldering terminals are arranged on the position of the hollow picture, and the heating panel, the soldering terminal, the base plate, the soldering terminal and the power chip are arranged in a down-top sequence and then welded; step 3. the power chip and the base plate are carried out press welding, an enclosure is arranged on the heating panel, the power electrode is welded on the base plate and a driving control panel is arranged on the power plate; and step 4. a first filled composite is filled between the base plate and the driving control panel and a second filled composite is filled between the driving control panel and the power electrode after the molding of the first filled composite. The method realizes that the power base plate, the driving control panel and the power electrode are integrated in one encapsulation.

Description

technical field [0001] The invention relates to power integration technology in the field of power electronics, in particular to a three-layer three-dimensional power packaging method and its structure. Background technique [0002] Insulated Gate Bipolar Transistor IGBT (Insulated Gate Bipolar Transistor) is a device composed of MOSFET and bipolar transistor. It combines the advantages of these two devices, and has the advantages of simple and fast driving of MOSFET devices. It also has the advantage of large capacity of bipolar devices, so it has been more and more widely used in modern power electronics technology. [0003] In the early 1980s, the successful development of IGBT devices and the subsequent continuous improvement and improvement of their rated parameters played an important role in the development of high-frequency and high-power applications. Because the IGBT is driven by voltage, it has a series of advantages such as small driving power, high switching sp...

Claims

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Application Information

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IPC IPC(8): H01L21/50H01L21/56H01L21/60H01L25/00H01L23/31H01L23/488H01L23/36
CPCH01L2224/48091H01L2224/45124H01L2224/48137H01L2924/30107H01L2924/1305H01L2924/13055H01L2924/13091H01L2924/181H01L2924/00014H01L2924/00H01L2924/00012
Inventor 李满长单绍柱曹云翔杜吉龙李小会李存信王明睿
Owner BEIJING RES INST OF AUTOMATION FOR MACHINERY IND
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