Crystal growth furnace with slurry-discharge guide structure

Abstract

The invention discloses a crystallizing furnace with a structure for discharging serosity and conducting fluid, wherein, four long brim boards are pendulously arranged at the periphery of a baseplate of a loaded framework, and four V-shaped brim grooves connected in series are correspondingly arranged below the four long brim boards; thus, if a crucible in the loaded framework contains hot melt silicon serosity to be discharged, the hot melt silicon serosity is firstly conducted to flow along the long brim boards, then drops down, and then flows into the V-shaped brim grooves, so that the silicon serosity is prevented from flowing along the periphery of the table board to the support pillars to break the support pillars and cause the crucible to incline and the silicon serosity to spill; in addition, a collecting utensil is added in the furnace bottom cover to contain large amount of discharged silicon serosity and isolate the serosity from the support pillars, thus not only protecting the pillars from damage, but also preventing the furnace bottom cover from deformation caused by heat shock of melt silicon serosity.

Description

technical field [0001] The invention relates to a crystal growth furnace, in particular to a crystal growth furnace suitable for polycrystalline silicon or single crystal silicon with a slurry leaking and diverting structure. Background technique [0002] see figure 1 , which is shown as an existing crystal growth furnace. As shown in the figure, a heating chamber 9 is arranged in the crystal growth furnace, and a table 94 and a load frame 93 are arranged in the heating chamber 9 . A crucible 92 is placed in the loading frame 93 , and molten silicon slurry 91 is filled in the crucible 92 . The three support columns 95 are fixed on the bottom of the crystal growth furnace, and are supported under the table 94 , the load frame 93 and the crucible 92 . [0003] Usually the crucible 92 is made of silicon dioxide (quartz), its softening point is about 1400°C, and the temperature of the molten silicon paste 91 is above 1412°C. Therefore, when the silicon paste 91 is in a molten...

AI Technical Summary

Problems solved by technology

Not only was the crystal growth furnace destroyed, but many facilities outside the furnace were also burned down, causing public security incidents

[0007] Sometimes, the amount of silicon slurry 91 flowing to the furnace bottom cover 82 is not enough to corrode the inner wall of the furnace bottom cover 82 to cause cooling water to flow into the furnace space 90, but the thermal shock of the silicon slurry 91 often causes the furnace bottom cover 82 to twist Deformation causes the furnace bottom cover 82 to fail to fit tightly with the furnace upper chamber 81, causing air to leak into the furnace

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