Photovoltaic cells of si-nanocrystals and applications in thin film transistor panel

A technology of nanocrystalline silicon and photovoltaic cells, applied in the field of photovoltaic cells, can solve problems such as lattice mismatch and solar cell junction loss

Active Publication Date: 2009-08-26
AU OPTRONICS CORP
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these tandem solar cells suffer from junction loss and lattice mismatch issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photovoltaic cells of si-nanocrystals and applications in thin film transistor panel
  • Photovoltaic cells of si-nanocrystals and applications in thin film transistor panel
  • Photovoltaic cells of si-nanocrystals and applications in thin film transistor panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0201] The technical solutions of the present invention will be further described in more detail in conjunction with the accompanying drawings and specific embodiments.

[0202] The invention is described in more detail in the following examples which are provided for illustration only, so that many modifications and changes will be apparent to those skilled in the art. A number of specific embodiments of the invention will be described in detail herein. Referring to the drawings, like numbers in the drawings indicate like components. As used herein and later throughout this patent application, the meanings of "a" and "the" are inclusive unless expressly stated otherwise. Additionally, as used herein and throughout the claims, the meaning of "in" includes "in" and "on" unless expressly indicated otherwise. In addition, some terms used in this specification will have more specific definitions below.

[0203] As used herein, "about" or "approximately" generally means within 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to view more

Abstract

The present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

Description

technical field [0001] The present invention relates to a photovoltaic cell, in particular to a photovoltaic cell with a photoelectric conversion layer with multiple energy gaps (multi-band gap), and its low temperature polycrystalline silicon thin film transistor (LTPS-TFT, "lowtemperature polycrystalline silicon thin film transistor") or Application in the panel of amorphous silicon thin film transistor (a-SiTFT, "amorphous silicon thin film transistor"). Background technique [0002] A solar cell or photovoltaic cell is a semiconductor device that utilizes the photoelectric effect to convert solar / light energy into electrical energy. Generally, a solar cell is configured as a large-area P-N junction (P-N junction) made of silicon, which has a layer of N-type (negative) silicon and a layer of P-type (positive) in direct contact with the layer of N-type silicon. type) silicon. When a photon hits the solar cell, the photon can either pass directly through the silicon (if t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/028H01L31/0224H01L31/18H01L31/20H01L21/268H01L21/324G02F1/133G02F1/1333G09G3/36H01L21/84
CPCY02E10/545Y02E10/546Y02E10/548Y02E10/50Y02E10/547Y02P70/50
Inventor 卓恩宗赵志伟彭佳添林昆志
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap