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Heterogenous pn junction solar blind ultraviolet detector

A technology of ultraviolet detectors and pn junctions, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as difficult silicon integration, difficult preparation, and complex components of GaN-based materials, and achieve low cost, simple structure, and easy structure Effect

Inactive Publication Date: 2013-08-14
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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Problems solved by technology

However, GaN-based materials have problems such as complex composition, difficulty in preparation, and difficulty in integrating with silicon.

Method used

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  • Heterogenous pn junction solar blind ultraviolet detector
  • Heterogenous pn junction solar blind ultraviolet detector
  • Heterogenous pn junction solar blind ultraviolet detector

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Embodiment Construction

[0016] Further illustrate substantive characteristics and remarkable progress of the present invention below in conjunction with accompanying drawing.

[0017] Refer to attached figure 1 , the heterogeneous pn junction solar-blind ultraviolet detector of the present invention is formed by stacking top electrode 1, zinc beryllium magnesium oxide thin film 2, p-Si substrate 3 and bottom electrode 4 from top to bottom.

[0018] In this example, the zinc-beryllium-magnesium oxide thin film is prepared by pulsed laser deposition method, and the specific process steps are as follows:

[0019] a) Substrate cleaning: Use a p-Si substrate, clean it ultrasonically with acetone, ethanol, HF acid and deionized water, and put it into a film-forming chamber. The background vacuum is 10 -4 Pa, keep the substrate temperature at 600°C.

[0020] b) Preparation of zinc beryllium magnesium oxide film: choose Zn 0.7 be 0.1 Mg 0.2 O ceramic sheet was used as a target material, and a zinc-bery...

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Abstract

The invention discloses a heterogenous pn junction solar blind ultraviolet detector. The structure of the detector is formed by superposing a top electrode, a Zn-Be-Mg-O film, a p-Si substrate and a bottom electrode from the top to the bottom in sequence. The Zn-Be-Mg-O film as a photoelectric response material has molecular formula of Zn<1-x-y>Be<x>Mg<y>O, wherein x and y are molar fractions; x is more than 0 and less than 1; y is more than 0 and less than 1; and sum of x and y is more than 0 and less than 1. On the premise that a single hexagonal wurtzite structure is maintained, a service band of the detector is controlled to a solar blind area (220 to 280nm) through regulating the content of Be and Mg in the film. The Zn-Be-Mg-O film and the p-Si form a heterogenous pn junction structure, an electron-hole pair generated by incident light can be separated under the action of a built in field, which causes that a current carrier drifts out of a depletion layer to form external circuit current. The detector has the advantages of interference free of sunlight background, low cost, external working voltage omission, simple structure and easy integration with Si, and has important application prospect in environmental protection, ultraviolet communication, biomedical research, astronomy and other fields.

Description

technical field [0001] The invention relates to a sun-blind ultraviolet detector, which belongs to the technical field of semiconductor photoelectric detection. Background technique [0002] In recent years, the application of ultraviolet light detectors in environmental protection, ultraviolet communication, biomedical research, astronomy and other fields has been increasing, and the research of new high-performance and low-cost ultraviolet light detectors has attracted widespread attention. Among them, the sun-blind ultraviolet detector is a research hotspot in the world. Due to the strong absorption of the atmospheric ozone layer, the solar radiation in the 220nm-280nm band cannot reach the surface of the earth, which is called the solar blind zone. Therefore, the solar-blind ultraviolet detector working in this band is not interfered by the solar radiation background, has a low false alarm rate and high accuracy, and has great advantages in practical applications. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/103H01L31/0296
Inventor 李效民杨长高相东张亦文曹逊
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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