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Detection system and method of lithography machine projection lens odd chromatic aberration based on two-stage illumination

A technology of projection objective lens and detection system, which is applied in the field of lithography machine, and can solve the problems of not considering the influence of illumination method on detection accuracy, etc.

Inactive Publication Date: 2011-01-26
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

[0006] Prior technologies 1 and 2 improved the detection accuracy of wave aberration by improving the structure of the detection mark, but these two technologies did not consider the influence of illumination methods on detection accuracy

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  • Detection system and method of lithography machine projection lens odd chromatic aberration based on two-stage illumination
  • Detection system and method of lithography machine projection lens odd chromatic aberration based on two-stage illumination
  • Detection system and method of lithography machine projection lens odd chromatic aberration based on two-stage illumination

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Embodiment Construction

[0050] The present invention will be further described below in conjunction with the examples and drawings, but the examples should not limit the protection scope of the present invention.

[0051] see first image 3 , image 3 It is a structural schematic diagram of the in-situ detection system for the odd aberration of the projection objective lens of the lithography machine adopted in the present invention. As can be seen from the figure, the detection system for the odd aberration of the lithography machine projection objective lens of the dipole illumination of the present invention includes: an illumination light source 1 for generating an illumination light field; an illumination system 2; Mask table 4; a projection objective lens 6 capable of converging the light beam passing through the detection mark 5 on the test mask 3 to the surface of the silicon wafer and with adjustable numerical aperture; a workpiece table capable of carrying silicon wafers and having three-d...

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Abstract

A detection system and method of lithography machine projection lens odd chromatic aberration based on two-stage illumination are disclosed, wherein the invention uses the two-stage illumination mode to replace the conventional illumination model so as to optimize the periodic parameter of the phase-shifting grating as the detection in two-stage illumination mode; the detection mark is used for detecting the wave aberration of the lithography machine projection lens; the detection precision is obviously improved.

Description

technical field [0001] The invention relates to a photolithography machine, in particular to a detection system and method for the odd aberration of a projection objective lens of a photolithography machine based on diode illumination. Background technique [0002] Effective detection and control of wave aberration of projection objective lens of lithography machine is one of the most important problems in lithography technology. The wave aberration of the projection objective lens of the lithography machine will reduce the imaging contrast, thereby reducing the lithography process window. Among all the wave aberrations, the odd aberration will cause the shift of the imaging position, and lead to the asymmetry of the line width of the imaging pattern, and increase the CD non-uniformity. As the feature size of lithography technology continues to decrease, the aberration tolerance of the projection objective lens of lithography machines becomes more and more stringent. Under ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
Inventor 彭勃王向朝邱自成袁琼雁曹宇婷王渤帆
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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