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Method for leading mixed gas into metal silicon solution

A mixed gas and gas introduction technology, applied in the direction of non-metallic elements, chemical instruments and methods, silicon compounds, etc., to achieve the effect of not easy to block, uniform temperature distribution, and removal of impurities

Inactive Publication Date: 2011-07-27
NAN AN SANJING SOLAR POWER
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

Despite many efforts over the past 30 years, there is still no commercial-scale economical method available to upgrade metallurgical-grade silicon to silicon suitable for solar-grade applications

Method used

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Experimental program
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Embodiment Construction

[0046] The present invention will be further described below in conjunction with the examples, but the following examples are only provided for reference and illustration, rather than limiting the present invention.

[0047] First use the following steps to make the air head, the steps are as follows:

[0048] 1. Choose high-purity zirconia as a high-temperature-resistant material;

[0049] 2. Grinding high-purity zirconia to particles with a size of 75-10 μm;

[0050] 3. Add sodium hydroxide liquid with a concentration of 25% to the zirconia, and the volume of the added liquid is such that the mixed zirconia particles and the liquid are in a viscous state, and stir evenly;

[0051] 4. Put the uniformly stirred high-purity zirconia into the forming mold;

[0052] 5. Heat the mold to 800°C, put it under a pressure equipment above 500T, and press it for 4 hours. When the temperature drops to 50°C, open the mold and take out the workpiece;

[0053] 6. Place the parts in a dark...

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Abstract

The invention discloses a method for leading mixed gas into metal silicon solution, used for removing purities such as P, B, O, C in metal silicon. Firstly, metal oxide particles of a micron grade having high temperature resistance are adopted to manufacture a plurality of dispersion tiny hole perforation gas outlet heads through high-pressure forming. Secondly, the gas outlet heads are respectively tightly combined according to gas guide types, and are arranged at the bottom of a silicon containing vessel. Thirdly, oxygen, hydrogen and steam are led into the silicon solution with a proportion of 50 percent, 25 percent and 25 percent and a gas pressure of 3kg. The silicon containing vessel can be continuously used after vessel wall slag shell is removed when each operation is completed. The method avoids premature mixing reaction before the mixed gas enters the solution, and contents of P, B, O, C in metal silicon after being purified are respectively lowered by 25 percent, 25 percent, 50 percent and 40 percent.

Description

technical field [0001] The present invention relates to a process for the removal of impurities, particularly phosphorus (P), boron (B), oxygen (O), carbon (C), from metallurgical grade (MG) silicon to produce solar grade (SG) silicon. The method particularly involves introducing the mixed gas in proportion during the smelting process. [0002] Background technique [0003] In recent years, demand for silicon as a solar cell material has rapidly increased due to heightened concerns about energy / environmental issues such as the consumption of fossil fuel energy and global warming issues. With the rapid development of the photovoltaic industry, the growth rate of polysilicon demand for solar cells is higher than that of semiconductor polysilicon. In 1994, the total output of solar cells in the world was only 69MW, but in 2004 it was close to 1200MW, an increase of 17 times in just 10 years. Experts predict that the solar photovoltaic industry will surpass nuclear power to be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/037C04B35/66C04B35/01C04B35/622
Inventor 郑智雄林霞戴文伟胡满根张伟娜杨丽芳闻震利洪紫州
Owner NAN AN SANJING SOLAR POWER
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