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Method for preparing In2O3 transparent conductive film with high mobility doped with Mo

A technology of transparent conductive film and high mobility, which can be used in circuits, electrical components, semiconductor devices, etc., and can solve problems such as poor film performance

Inactive Publication Date: 2009-10-21
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to solve the problem of relatively poor film properties under high-speed deposition conditions, and to provide a method for preparing high-mobility IMO transparent conductive films using electron beam evaporation technology and gradient growth rate

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  • Method for preparing In2O3 transparent conductive film with high mobility doped with Mo
  • Method for preparing In2O3 transparent conductive film with high mobility doped with Mo
  • Method for preparing In2O3 transparent conductive film with high mobility doped with Mo

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Embodiment 1

[0018] The specific manufacturing process of the growth IMO thin film method that the present invention proposes is as follows:

[0019] 1. The electron beam evaporation technology is initially at a low rate Under the condition of growing IMO film 30nm, as a buffer layer;

[0020] 2. Secondly, under the condition that other growth conditions remain unchanged, the high-speed A 50nm IMO film is grown, and the final grown film is an IMO film with a thickness of 80nm. The film structure: glass / -30nm / -50nm; the above-mentioned thickness is the thickness tested by the quartz crystal oscillator in the film growth system, and the actual measured film thickness is 110nm.

[0021] The typical growth conditions are as follows: the IMO thin film is grown by electron beam evaporation technology, the area of ​​the glass substrate is 10cm×10cm, the growth temperature is set at 350°C, and the background vacuum is 3.0×10 -3 Pa, into high-purity O 2 The working air pressure is 7.7×10 ...

Embodiment 2

[0026] The specific manufacturing process of the film:

[0027] 1. The electron beam evaporation technology is initially at a low rate 40nm IMO thin film was grown under the conditions as a buffer layer;

[0028] 2. Secondly, under the condition that other growth conditions remain unchanged, the high-speed Grow a 60nm IMO film, and finally grow an IMO film with a thickness of 70nm. The film structure: glass / -20nm / -60nm; the above thickness is the thickness tested by the quartz crystal oscillator in the film growth system, and the actual thickness is 120nm.

[0029] The typical growth conditions are as follows: the IMO thin film is grown by electron beam evaporation technology, the area of ​​the glass substrate is 10cm×10cm, the growth temperature is set at 350°C, and the background vacuum is 3.0×10 -3 Pa, into high-purity O 2 The working air pressure is 7.7×10 -2 Pa, using high-purity In 2 o 3 :MoO 3 Target (MoO 3 : 0.5% weight ratio), electron gun operating vo...

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Abstract

The invention relates to a method for preparing an In2O3 transparent conductive film with high-mobility doped with Mo (namely In2O3: Mo-IMO) by electron beam evaporation technology. The growth of the IMO film by the technology is divided into two stages, wherein a high-purity ceramic target In2O3:MoO3 and O2 are taken as raw materials, and the temperature of a substrate is between 330 and 400 DEG C. The method comprise the following steps: growing a layer of buffer layer IMO film at the low velocity of between 0.1 and 0.2* / s by the technology, wherein the thickness of the film is between 30 and 40 nanometers; and secondly, improving the growth velocity to be between 0.4 and 1.0 * / s, and growing an IMO film at high velocity, wherein the thickness of the film is between 50 and 80 nanometers. The typical film resistivity is 2.5*10omega cm; the square resistance is 22.5 omega; the carrier concentration is 5.8*10omega cm; the electron mobility is 47.1 cmVs; and the average transmission of visible light and near infrared regions is 80 percent. The photoelectric properties of the IMO film obtained by the technology are equivalent to or better than that of a film which is grown by utilization of low velocity, and the growth time of the film is greatly reduced.

Description

【Technical field】: [0001] The invention belongs to the technical field of transparent conductive oxide thin films, in particular to a method for preparing a transparent conductive thin film suitable for the application of thin film solar cells. 【Background technique】: [0002] The optical bandwidth of hydrogenated amorphous silicon (a-Si:H) is about 1.7eV, and its absorption coefficient is higher in the short-wave direction, while the optical bandwidth of hydrogenated microcrystalline silicon (μc-Si:H) is about 1.1eV, and its absorption coefficient The coefficient is higher in the long-wave direction, and can absorb into the near-infrared long-wave region, and the absorption wavelength can be extended to 1100nm, which makes better use of the solar spectrum. figure 1 The relationship between optical wavelength, absorption intensity and absorption coefficient of a-Si:H and μc-Si:H materials is given ( figure 1 a is the relationship between photon energy and absorption intensi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/30C23C14/06H01L31/0224
Inventor 陈新亮耿新华张建军赵颖
Owner NANKAI UNIV
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