Method for producing metallic channel

Abstract

The invention provides a method for producing a metallic channel, in particular a top-layer metallic channel, comprising steps as follows: 1, coating photoresistance on a hard mask layer and etching the hard mask layer by a plasma; 2, form a metallic channel of preset depth a silicon substrate layer under the mask layer etched by the plasma, wherein etching the silicon substrate layer in step 2 comprises the following three steps: 21, performing major etching, i.e. etching the silicon substrate layer to form a metallic channel with a depth less than the preset depth; 22, removing the photoresistance on the hard mask layer; 23, performing over etching, i.e. further etching the silicon substrate layer to form a metallic channel of preset depth, and both the major etching and the over etchingare performed in a magnetic field of preset strength. The metallic channel on the silicon substrate layer is etched by utilizing main etching and over etching supported by the magnetic field in two steps, thereby the problem of stripe edge existed in the traditional method for producing metallic channels can be solved and depth evenness of the metallic channel can be improved.

Description

technical field [0001] The invention relates to the field of manufacturing metal grooves on wafers, in particular to a metal groove manufacturing method applied to making top-layer metal grooves. Background technique [0002] In the manufacturing process of integrated chips, in order to form the interconnection between the semiconductor devices on the same layer or different layers of the integrated chip wafer or the connection between the semiconductor chip and the pad on the chip, it is necessary to make metal grooves. The filling metal realizes the electrical continuity connection. The fabrication of metal grooves on the top layer of the wafer, and filling the metal grooves with metal materials to realize the interconnection between devices or the connection with pads is the most critical process in the current semiconductor manufacturing process, especially in the current copper wiring process. When the silicon substrate used to make the top metal trench (Top Metal Tren...

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Problems solved by technology

[0003] The object of the present invention is to provide a method for making metal grooves, to solve the problems of the traditional production of stripes on the edge of the top layer of metal grooves and the large difference in the depth of the metal grooves, thereby solving the problems caused by the large differences in the stripes and depths of the edges of the metal grooves. The problem of poor uniformity of metal resistance caused by filling

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