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Capacitance type microphone with stress release membrane prepared at a low temperature and preparation method thereof

A capacitive microphone and its manufacturing method are applied to electrical components, electrostatic transducers, microphones, sensors, etc., and can solve the problems of high forming process temperature, difficulty in system integration, large size, etc.

Inactive Publication Date: 2009-11-04
王文 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the micro-processing of these sensing films is relatively mature, this traditional sensing film has the following disadvantages: (1) The forming process temperature of the film is relatively high, and it is difficult to integrate with related signal processing chips
(2) The large residual stress of the vibrating film leads to a relatively large size of the device, which is not easy for system integration

Method used

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  • Capacitance type microphone with stress release membrane prepared at a low temperature and preparation method thereof
  • Capacitance type microphone with stress release membrane prepared at a low temperature and preparation method thereof
  • Capacitance type microphone with stress release membrane prepared at a low temperature and preparation method thereof

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Embodiment Construction

[0012] Both the foregoing general description and the following detailed description are by way of example only, and are further explanation and illustration of the invention as claimed.

[0013] Figure 1A is a schematic cross-sectional structure diagram of the capacitive microphone of the present invention, wherein the microphone is based on a substrate 101 with a resonant cavity 1011 . Such as Figure 1A As shown, wherein, the microphone is arranged on the substrate 101 , and the resonant cavity 1011 is arranged on the substrate 101 . The substrate can be made of conductive, insulating or semiconducting materials. The pressure sensing diaphragm includes a conductive layer 111 and a sealing layer 112 . A rigid back plate is provided on the diaphragm, and the back plate is composed of a conductive layer 131 and a rigid structural layer 132 , both of which are provided with vent holes 1321 . An air gap 1211 is formed between the sealing layer 112 and the conductive layer 131...

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Abstract

A capacitance type microphone with a stress release membrane prepared at a low temperature and a preparation method thereof. The capacitance type microphone includes a substrate having at least a resonant cavity; a septum, arranged on the top of the resonant cavity and connected with the substrate for implementing a mechanical vibration when being excitated by an acoustic pressure wave; a back board, arranged on the top of the septum and having a plurality of perforations; an air gap is provided the back board and the septum; a capacitor is composed of the septum, the air gap and the back board. The method includes steps: forming the resonant cavity on the substrate; forming the septum on the top of the resonant cavity, wherein the septum is connected with the substrate; setting the back board on the top of the septum, wherein the back board has a plurality of perforations; forming the air gap between the back board and the septum. The invention is a MEMS capacitance type microphone processed by a completely low-temperature technique. It is capable of being used as a post IC circuit processing technique being compatible thereof. The structure of the vibration diaphragm of the capacitance type microphone is a stress-releasing structure, and is capable of reducing a parasitic capacitance. Comparing with the traditional initial stress release membrane, the invention improves the sensitivity of the microphone more effectively.

Description

【Technical field】 [0001] The invention relates to a condenser microphone and a manufacturing method thereof. A condenser microphone includes a diaphragm with electrodes disposed on a substrate having at least one resonant cavity, and a counter-electrode backplate on the diaphragm. There is an air gap between the diaphragm and the backplate; the electrodes are connected to the backplate through a plurality of stress relief structures. The materials of the diaphragm and backsheet are selected to avoid sticking during processing and use. Between the backplane and the substrate support is a thicker dielectric layer. The manufacturing process of the whole device is carried out at a temperature not exceeding 300°C. 【Background technique】 [0002] The pressure-sensing membrane of a typical condenser microphone uses a low-stress silicon nitride or single-crystal silicon thin film. Although the micro-processing of these sensing films is relatively mature, this traditional sensing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R19/04H04R31/00
Inventor 王文朱睿卿王俊
Owner 王文
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