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Novel multilayer transparent conductive film structure and preparation method thereof

A transparent conductive film, a new type of technology, applied in coatings, circuits, electrical components, etc., can solve the problems of slow film growth, increased equipment complexity, and no suede structure on the film surface

Inactive Publication Date: 2009-11-18
ENN SOLAR ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the ZnO thin film is usually prepared by sputtering method. The growth rate of the film under this process is very slow, and the film surface does not have an ideal textured structure, and acid etching is usually used to form the textured structure, so that Increased equipment complexity and reduced production efficiency

Method used

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  • Novel multilayer transparent conductive film structure and preparation method thereof
  • Novel multilayer transparent conductive film structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Sequential Preparation of SiO by Online APCVD Process on Float Glass 2 Thin film and FTO thin film, deposited at 600°C, SiO 2 The thickness of the film layer is 70 nanometers, and the thickness of the FTO film layer is 500 nanometers. According to the characteristics of the process, it can be known that the FTO film prepared by online APCVD is a film with a suede structure. The substrate temperature of the sputtering equipment is 350 degrees Celsius. Float glass The area with a temperature of 350° C. in the cooling zone of the production line is directly connected to the loadlock chamber of the sputtering equipment. The glass of the float glass production line is transported to this area, that is, when the glass temperature drops to 350°C, it directly enters the sample chamber of the sputtering equipment, and then is transported into the process chamber of the sputtering equipment to deposit Al-doped ZnO For the thin film, the target material used is a 1wt% Al-doped Zn...

Embodiment 2

[0021] SiO 2 The preparation of the film is the same as in Example 1. The FTO film layer is also prepared by online APCVD equipment, with a thickness of 300 nanometers. The FTO film prepared by this online APCVD is a film with a textured structure. At this time, the substrate temperature of the sputtering equipment is 200 ° C, and the float glass production line The cooling zone with a temperature of 200° C. is directly connected to the loadlock chamber of the sputtering device. The glass of the float glass production line is transported to this area, that is, when the glass temperature drops to 200°C, it is directly transported into the sample chamber of the sputtering equipment, and then transported into the process chamber of the sputtering equipment to deposit Ga-doped For the ZnO thin film, the target used is a 0.57wt% Ga-doped ZnO target. The Ga-doped ZnO thin film has a thickness of 300 nm.

Embodiment 3

[0023] SiO 2 The preparation of the thin film and the FTO film layer is the same as in the second embodiment, the deposition temperature is also 200° C., the target used is a 0.8 wt % Zr-doped ZnO target, and the thickness of the Zr-doped ZnO film is 100 nanometers.

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Abstract

The invention provides a novel multilayer transparent conductive film structure and a preparation method thereof. On a float glass substrate, a SiO2 transition layer, an FTO layer and a ZnO-based film layer are prepared in turn. The SiO2 and the FTO layers are finished through an on-line APCVD process on a float glass, a sputtering deposition device is connected to a temperature reduction section of a float glass production line, and a ZnO-based transparent conductive oxide film begins to grow by sputtering after the glass substrate with a proper temperature is directly delivered to a sample introduction chamber. The multilayer film has high light transmission rate simultaneously, a wet process is not used, and due to the characteristic that the FTO layer prepared by APCVD has matte structure, a ZnO wrapped FTO transparent conductive double-layer film with the matte structure is directly generated.

Description

technical field [0001] The invention relates to the field of thin film solar cells, in particular to a novel multilayer transparent conductive thin film structure and a preparation method. Background technique [0002] With the development of photovoltaic power generation technology, especially the large-scale industrialization of thin-film solar cells in recent years, transparent conductive oxide films (TCO), as an indispensable part of thin-film solar cells, have attracted great attention. The front electrode of thin-film solar cells uses transparent conductive oxide (TCO) glass, and its performance plays a vital role in the conversion efficiency of the cell. Solar cells require that the front electrode has extremely low light loss, high transmittance and high conductivity, and has a good light trapping effect. The light-trapping structure is specifically manifested in the formation of a certain suede surface on the surface of the film with a certain roughness. Through li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18C23C28/00C23C16/40C23C16/44C23C14/34C23C14/08
CPCY02P70/50
Inventor 孙劲鹏雷志芳唐茜
Owner ENN SOLAR ENERGY