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Forming method of semiconductor substrate and manufacturing method of solar cell

A technology for solar cells and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problems that affect the photoelectric conversion efficiency of solar cells, the quality of thin-film silicon layers is poor, and the number of times that silicon wafers can be reused is limited. and other problems, to achieve the effect of simple and controllable process, saving production cost and low cost

Inactive Publication Date: 2009-12-02
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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Problems solved by technology

[0004] In the manufacturing method of the thin-film silicon layer, after the thin-film silicon layer is separated from the silicon wafer, the silicon wafer is also reused, but since the silicon wafer forms a porous silicon layer by anodic oxidation, the silicon wafer can be reused. very limited
[0005] Since the thin film silicon layer is grown on the porous silicon layer, the quality of the formed thin film silicon layer is not good, and when used to form a solar cell, it affects the photoelectric conversion efficiency of the solar cell

Method used

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  • Forming method of semiconductor substrate and manufacturing method of solar cell
  • Forming method of semiconductor substrate and manufacturing method of solar cell
  • Forming method of semiconductor substrate and manufacturing method of solar cell

Examples

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Embodiment 1

[0034] A method for forming a semiconductor substrate, referring to the attached Figure 6 As shown, it includes: step S10, providing a base material, and sequentially forming a first material layer and a second material layer on the base material, and the first material layer and the second material layer form a PN junction; step S11, in the first material Perform ion implantation in the layer to form an ion implantation layer, and the ion implantation layer is close to the connection surface between the first material layer and the base material; step S12, forming a supporting layer on the second material layer; step S13, annealing; step S14, in The location of the ion implantation layer separates the base material and the first material layer.

[0035] Reference attached figure 1 As shown, a base material 100 is provided, and the base material 100 is a semiconductor material such as silicon, silicon-on-insulator or silicon-germanium, and the materials such as silicon-on-i...

Embodiment 2

[0049] This embodiment provides a method for making a solar cell, refer to the attached Figure 15 As shown, it includes: step S20, providing a base material, and sequentially forming a first material layer and a second material layer on the base material, and the first material layer and the second material layer form a PN junction; step S21, in the first material Perform ion implantation in the layer to form an ion implantation layer, the ion implantation layer is close to the connection surface of the first material layer and the base material; step S22, forming a support layer on the second material layer; step S23, annealing; step S24, the Ion implantation layer separation and base material separation from the first material layer; Step S25, forming a passivation layer on the first material layer and etching the passivation layer to form an opening; Step S26, forming a seed crystal on the inner wall of the opening layer; step S27, forming a conductive layer on the seed la...

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Abstract

A forming method of semiconductor substrate includes that: a base material is provided; a first material layer and a second material layer are sequentially formed on the base material, and the first material layer and the second material layer form a PN junction; ion implantation is carried out in the first material layer to form an ion implanted layer which is closed to the junction face of the first material layer and the base material; a support layer is formed on the second material layer; annealing is carried out; and the base material and the first material layer are separated on the ion implanted layer. The method has low cost, film quality of the first material layer and the second material layer is good, the base material can be used repeatedly, and the cost is low. The invention also provides a manufacturing method of solar cell.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor substrate for a solar cell and a method for manufacturing a solar cell. Background technique [0002] Solar cells have been extensively studied as the driving energy of various instruments. Through the continuous efforts of scientists, the production cost of solar cells has been significantly reduced. In the production of solar cells, more than 45% of the production cost is used in the production of silicon, which is used to form the PN junction and finally convert solar energy into electrical energy. In order to reduce the production cost of solar cells, scientists have worked hard to replace thick "silicon wafers" with thinner "thin-film silicon". [0003] U.S. Patent 6258698 provides a method for making a thin-film silicon layer. First, a porous silicon layer is formed on a silicon wafer. The porous silicon layer can be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18
CPCY02P70/50
Inventor 肖德元
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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