Application of raw material silicon briquette with good packing performance in single crystal furnace or polycrystalline furnace

Abstract

The invention relates to application of a raw material silicon briquette with good packing performance in a single crystal furnace or a polycrystalline furnace, in particular to a method comprising that the raw material silicon briquette with good packing performance prepared from silicon powder through cool isopressing or hot isopressing is put into the single crystal furnace or the polycrystalline furnace and taken as an initial raw material for growing silicon crystal. The raw material silicon briquette has the compressive parameter between 0.1 and 50MPa, and the purity between 99.99 and 99.9999999 percent. The raw material silicon briquette can be fused in the single crystal furnace or polycrystalline furnace in the field of solar energy or semiconductors to be used as a raw material silicon for producing crystal silicon rods or silicon ingots; and one of application of the raw material silicon briquette is that the raw material silicon briquette is taken as the initial raw material for producing finished silicon chips of solar cells. The raw material silicon briquette with good packing performance has good oxidation resistance and compressive property, and is not easily cracked and ruptured; and the silicon powder also does not easily fall off from the surface of the raw material silicon briquette.

Description

technical field [0001] The invention relates to the application of a raw material silicon block with good filling performance in a single crystal furnace or a polycrystalline furnace. , into the single crystal furnace or polycrystalline furnace, the initial raw material for silicon crystal growth. The raw silicon block can be melted in a single crystal furnace or a polycrystalline furnace in the field of solar energy or the semiconductor field and used as raw silicon for producing crystalline silicon rods or silicon ingots. One use of the raw silicon block is as a starting material for the production of finished silicon wafers for solar cells. Background technique [0002] The single crystal furnace referred to throughout the present invention refers to a growth furnace for growing single crystal silicon. [0003] The polycrystalline furnace referred to throughout the present invention refers to a growth furnace for growing polycrystalline silicon. [0004] The raw silico...

AI Technical Summary

Problems solved by technology

[0021] (4) At present, there is no suitable method for applying a large amount of silicon powder in a single crystal furnace or a polycrystalline furnace in the prior art

These powders will not only damage the equipment components, affect the stability of the process and products, and even cause serious safety accidents

In addition, during the loading process, the flying dust will be inhaled into the human body, which may easily cause occupational diseases such as silicosis

(2) The bulk density is small

But US20070014682 does not involve isostatic pressing technology