Semiconductor substrate for use in epitaxy of semiconductor optoelectronic element and method for manufacturing same
A technology of optoelectronic components and semiconductors, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc. It can solve the problems that the epitaxial quality of gallium nitride semiconductor material layers needs to be improved, and achieve the effect of improving photoelectric efficiency and epitaxial quality
Active Publication Date: 2013-01-23
HANNSTAR DISPLAY NANJING
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
So far, the substrates of gallium nitride semiconductor optoelectronic components (such as light-emitting diodes, photodetectors) are mostly sapphire substrates, but because there is no good crystal between the gallium nitride semiconductor material layer and the sapphire substrate Lattice match, resulting in the epitaxial quality of the gallium nitride semiconductor material layer still needs to be improved
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0014] see figure 1 , figure 1 A semiconductor substrate 1 according to an embodiment of the invention is shown. The semiconductor substrate 1 can be used for the epitaxy of a semiconductor optoelectronic element (eg, light emitting diode, photodetector).
[0015] like figure 1 As shown, the semiconductor substrate 1 includes a substrate 10 and a nitride buffer layer 12 .
[0016] In practical applications, the substrate 10 can be made of sapphire (sapphire), silicon (Si), SiC, GaN, ZnO, ScAlMgO 4 , YSZ (Yttria-Stabilized Zirconia), SrCu 2 o 2 , LiGaO 2 , LiAlO 2 , GaAs or other similar substrates.
[0017] In a specific embodiment, the nitride buffer layer 12 may be formed of aluminum nitride (AlN), and the thickness of the buffer layer 12 may be between 10 nm and 500 nm, but not limited thereto.
[0018] The nitride buffer layer 12 is formed on an upper surface 100 of the substrate 10 by an atomic layer deposition process, a plasma-enhanced atomic layer deposition p...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a semiconductor substrate for use in the epitaxy of a semiconductor optoelectronic element and a method for manufacturing the same. The semiconductor substrate of the invention comprises a substrate and a nitride buffer layer, wherein the nitride buffer layer is formed on the upper surface of the substrate by an atom layer depositing process, a plasma-reinforced atom layerd epositing process or a plasma-aided atom layer depositing process. The nitride buffer layer improves the epitaxy quality of a semiconductor material layer of the semiconductor optoelectronic element.
Description
technical field [0001] The invention relates to a semiconductor substrate, in particular to a semiconductor substrate for the epitaxy of a semiconductor optoelectronic device. Background technique [0002] Semiconductor optoelectronic devices (eg, light emitting diodes, photodetectors) can be widely used in various devices, such as optical display devices, traffic signs, communication devices, and lighting devices. In order to ensure high functional reliability and low energy consumption for semiconductor optoelectronic components as much as possible, the overall optoelectronic performance of the semiconductor optoelectronic components is required. [0003] In the prior art, a buffer layer can be formed between the semiconductor material layer and the substrate of the semiconductor photoelectric element to improve the quality of the semiconductor material layer. So far, the substrates of gallium nitride semiconductor optoelectronic components (such as light-emitting diodes,...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L31/02H01L31/18H01L21/205
CPCY02P70/50
Inventor 陈敏璋徐文庆何思桦
Owner HANNSTAR DISPLAY NANJING