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Multi-element doping n-type zinc-oxide-base transparent conducting film and preparation method thereof

A transparent conductive film, zinc oxide-based technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve problems such as performance degradation, poor stability of ZnO-based film, and inability to meet solar cell applications. , to achieve the effect of improving stability, easy quality monitoring, and improving stability

Inactive Publication Date: 2010-03-03
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a high temperature and humid environment, the stability of ZnO-based thin films such as BZO and AZO is not good, and the performance has declined. Therefore, the currently developed ZnO-based coated glass cannot meet the applications of solar cells and other optoelectronic fields.

Method used

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  • Multi-element doping n-type zinc-oxide-base transparent conducting film and preparation method thereof
  • Multi-element doping n-type zinc-oxide-base transparent conducting film and preparation method thereof
  • Multi-element doping n-type zinc-oxide-base transparent conducting film and preparation method thereof

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Effect test

Embodiment 1

[0039] Using ZnO-based doping compound (ZnO:Al, Si) as the target material, the doping ratios of Al and Si are 2.0mol% and 3.0mol%, respectively, and ordinary glass is used as the substrate, and the background vacuum is pumped to 2.0×10 -4 Pa, with high-purity argon as the working gas, and a small amount of O 2 and H 2 Gas (O 2 and H 2 accounted for 3% and 6% of the total gas flow respectively), the working pressure was maintained at 1.0Pa, the substrate temperature was 150°C, the distance between the target and the substrate was set at 7.5cm, DC magnetron sputtering was adopted, and the sputtering power was 80W , the deposition time is 40min. The film has a visible light transmittance of 88% and an electronic conductivity of 1.5×10 4 S / cm, the retention rate of electrical conductivity and light transmittance is above 98% after accelerated aging for 50 hours in an environment with a temperature of 60 degrees Celsius and a relative humidity of 70%. The SEM images, transmis...

Embodiment 2

[0042] Using ZnO-based doping compound (ZnO:Al, Sn) as the target material, the doping ratio of Al and Sn is 2.0mol% and 5mol%, and using ordinary glass as the substrate, the background vacuum is pumped to 2.0×10 -4 Pa, with high-purity argon as the working gas, the working pressure is maintained at 1.2Pa, the substrate temperature is 150°C, the distance between the target and the substrate is set at 7cm, DC magnetron sputtering is used, the sputtering power is 120W, the deposition time After 40 min, the crystal grains grew obviously, and the crystalline quality of the film was significantly improved. The thickness of the film is about 1500nm, the transmittance of visible light is above 85%, and the electronic conductivity is 1.2×10 4 S / cm, the retention rate of electrical conductivity and light transmittance is above 90% after accelerated aging for 50 hours in an environment with a temperature of 60 degrees Celsius and a relative humidity of 70%.

Embodiment 3

[0044] Using ZnO-based doping compound (ZnO:Al, In) as the target material, the doping ratio of Al and In is 2.0mol% and 5mol%, and using ordinary glass as the substrate, the background vacuum is pumped to 2.0×10 -4 Pa, with high-purity argon as the working gas, and a small amount of O 2 and H 2 Gas (O 2 and H 2 accounted for 5% and 2% of the total gas flow respectively), the working pressure was maintained at 1.2Pa, the substrate temperature was 90°C, the distance between the target and the substrate was set at 7cm, radio frequency magnetron sputtering was used, and the sputtering power was 60W. The deposition time is 30min. Next, adjust O 2 and H 2 Gas volume (O 2 and H 2 accounted for 0.05% and 5.0% of the total gas flow respectively), the working pressure was maintained at 0.3Pa, the substrate temperature was room temperature, the distance between the target and the substrate was set at 5cm, DC magnetron sputtering was adopted, and the sputtering power was 140W. Th...

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Abstract

The invention provides a multi-element doping n-type zinc-oxide-base transparent conducting film. The doping elements are unevenly distributed in the crystal grains, on the crystal grain surface and in the crystal boundary of the film. The preparation method deposits the multi-element doping zinc oxide polycrystal film by utilizing the high-vacuum magnetron sputtering technique, realizes the enriched distribution of the doping elements on the crystal grain surface and the crystal boundary by controlling the solutionization and the diffusion of various doping elements in the forming progress ofthe crystal grains and the crystal boundary, and forms the compound zinc-oxide-base film with uneven distribution of the doping elements so as to enhance the stability in the high-temperature high-humidity environment. The high-performance zinc-oxide-base transparent conducting film has the advantages of simple preparation process, superior conductivity, low cost and high transparency in visibleregions, and has wide application prospects in the fields of transparent electronics and novel photoconducting devices.

Description

technical field [0001] The invention relates to a multi-element doped n-type zinc oxide-based transparent conductive film and a preparation method thereof, belonging to the technical field of transparent conductive material (TCO) films. Background technique [0002] Since the first translucent conductor CdO [K.Badeker, Ann.Phys.Leipzig, 1907, 22, 749] came out in 1907, transparent conductors have been widely used due to the needs of military and industrial applications. Transparent conductors combine high transparency and high electrical conductivity, which are usually incompatible, in the same material. Most of the discovered transparent conductors are transparent conductive oxides (TCOs), which mainly belong to n-type electronic conduction. The transparent conductive oxide film is mainly coated with a layer of transparent conductive oxide film on the surface of flat glass by physical or chemical coating method, mainly including In, Sn, Zn and Cd oxides and their composite...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35
Inventor 黄富强万冬云
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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