High-power transistor

A technology of high-power transistors and wafers, which is applied to electric solid-state devices, semiconductor devices, and semiconductor/solid-state device components, etc., can solve the problems of low lead frame thickness requirements, increased processing steps, and high product costs, so as to improve product competition. Strength, volume reduction, life extension effect

Inactive Publication Date: 2010-03-03
四川大雁微电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the price of KFC is expensive. Taking TO-126 packaging products as an example, the thickness of the lead frame is 5mm, so the product cost is high. In the actual use process, it is limited by the shape of the package, and the heat dissipation requirements are not high. In a few high-power In the application, the heat dissipation can be achieved by adding a heat sink, so the thickness requirement for the lead frame is relatively low. If it is too thick, raw materials will be wasted and the cost will be increased. In addition, the length of the commonly used frame pins reaches 15-16mm, which is both Waste of material, and because the product is basically inserted directly into the deepest part of the printed circuit board PCB, the excessively long frame pins are cut off after welding as waste products, which not only increases the processing steps, but also the redundant pins are in the process of packaging and transportation. Easy to deform, causing inconvenience for subsequent tooling

Method used

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Embodiment Construction

[0014] The present invention will be further described below in conjunction with accompanying drawing:

[0015] Depend on figure 1 and figure 2 As known, the present invention includes a plastic package 1 , a chip 3 , a lead frame 5 , and leads 6 . The upper self-generated heat sink 2 of the lead frame 5, the lower self-generated collector pin 8, the emitter pin 7 and the base pin 9 are arranged at intervals on both sides of the collector pin 8, and the chip 3 is bonded by the solder layer 4. Fixed on the lead frame 5, the emitter pin 7 and the base pin 9 are connected to the chip 3 through the lead wire 6, the lead wire 6 can be made of gold wire or copper wire, and the above-mentioned structure is packaged with the plastic package body 1 to form a high power transistors. The collector 8 on the lead frame 5 is the same length D as the emitter pin 7 and the base pin 9, see figure 1 , D is 6-8mm, the optimum is 6.45mm, the material of lead frame 5 and pins 7, 8, and 9 are ...

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Abstract

The invention discloses a high-power transistor, which comprises a wafer, a lead frame, leads, pins and a plastic sealing body, wherein the upper part of the lead frame automatically generates a radiating fin, while the lower part of the lead frame automatically generates a collector pin; both sides of the collector pin are provided with an emitter pin and a base pin at intervals; the lead frame is thin with the thickness of between 0.38 and 0.42 mm; and the pins are short with the length of between 6 and 7 mm, and are made of KFC copper materials containing iron of 2 to 5 percent. The high-power transistor has the characteristics of small size, raw material saving, low cost, high power, simple processing, reliable work and long service life, and can be widely used as a key electrical element in televisions, audio equipment, electronic instruments and equipment and electronic light source.

Description

technical field [0001] The invention relates to a semiconductor element, in particular to a high-power transistor. Background technique [0002] Transistor is an important electrical component, which is widely used in various household appliances such as televisions and audio equipment, electronic equipment, electronic light sources and other fields. At present, the core component lead frame of the semiconductor device transistor is made of KFC, which is a copper material containing 2-5% iron, which has excellent electrical and thermal conductivity, and has good thermal stress coordination with the chip. However, the price of KFC is expensive. Taking TO-126 packaging products as an example, the thickness of the lead frame is 5mm, so the product cost is high. In the actual use process, it is limited by the shape of the package, and the heat dissipation requirements are not high. In a few high-power In the application, the heat dissipation can be achieved by adding a heat sin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/495H01L23/367
CPCH01L2224/45144H01L2224/48091H01L2224/73265H01L2224/32245H01L2224/49171H01L2224/48247H01L2224/45147H01L2924/181
Inventor 宋泓志王敏
Owner 四川大雁微电子有限公司
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