Chemical mechanical polishing solution

Abstract

The invention discloses chemical mechanical polishing solution, which comprises polishing particles and water, as well as bis-biguanide compounds, azole compounds and electrolyte. The bis-biguanide compounds and the azole compounds simultaneously contained in the polishing solution have synergic effect, and are associated with the added electrolyte, so the polishing solution can remarkably improve the velocity of removing polycrystalline silicon.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid in semiconductor manufacturing process. Background technique [0002] With the continuous development of semiconductor technology and the continuous increase of interconnection layers in large-scale integrated circuits, the planarization technology of conductive layers and insulating dielectric layers has become particularly critical. The chemical mechanical polishing (CMP) technology pioneered by IBM in the 1980s is considered to be the most effective method for global planarization. [0003] Chemical mechanical polishing (CMP) is composed of chemical action and mechanical action and the combination of the two actions. Its equipment usually consists of a polishing table with a polishing pad (pad), and a polishing head (carrier) for carrying a chip (wafer). Among them, the grinding head fixes the chip, and then presses the front side of the chip on the grinding pad. When chemical mechan...

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Problems solved by technology

The hydrophobic groups of the polymer are thought to be adsorbed on the polysilicon surface, forming a passivation layer that reduces the polysilicon removal rate

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