Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quaternary ammonium salt cationic surfactant and application of chemical mechanical polishing solution

A technology of quaternary ammonium salt cations and surfactants, which is applied in the direction of polishing compositions containing abrasives, etc., and can solve the problems of high abrasive prices and high production costs

Active Publication Date: 2013-08-28
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The abrasive used is expensive and the production cost is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quaternary ammonium salt cationic surfactant and application of chemical mechanical polishing solution
  • Quaternary ammonium salt cationic surfactant and application of chemical mechanical polishing solution
  • Quaternary ammonium salt cationic surfactant and application of chemical mechanical polishing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～22

[0023] Table 1 shows examples 1-20 of chemical mechanical polishing fluids applied to the polishing of low-dielectric materials. According to the formula given in the table, mix other components except the oxidizing agent evenly, and use KOH or HNO 3 Adjust to desired pH. Add oxidant before use and mix evenly. Water makes up the mass percentage to 100%.

[0024] Table 1 Barrier Layer Chemical Mechanical Polishing Fluid Examples 1-22

[0025]

[0026]

[0027]

Embodiment 23～35

[0029] Examples 23-35 all contain 10wt% silicon dioxide (70nm), 0.1wt% benzotriazole, 0.01wt% phosphoric acid, 1wt% hydrogen peroxide, and 0.001wt% diethoxy-bis(dodecane dimethyl ammonium bromide), also contain polycarboxylate compound and / or its salt respectively, as shown in table 2. The preparation method is the same as above.

[0030] Table 2 embodiment 23~35 contained polycarboxylate compound and its pH

[0031]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses application of a quaternary ammonium salt cationic surfactant in preparing chemical mechanical polishing solution for a low dielectric material, and also discloses application of the chemical mechanical polishing solution in polishing the low dielectric material. The chemical mechanical polishing solution comprises polishing particles, the quaternary ammonium salt cationicsurfactant, a corrosion inhibitor, a complexing agent, an oxidant and water. In the application, the quaternary ammonium salt cationic surfactant and the polishing solution containing the same can inhibit the polishing velocity of the low dielectric material (such as BD), but do not have great influence on the velocity of removing copper, tantalum and silicon dioxide (Teos).

Description

technical field [0001] The invention relates to a new application of a quaternary ammonium salt type cationic surfactant and a chemical mechanical polishing liquid. Background technique [0002] Due to the high dielectric constant of traditional dielectric layer materials (such as TEOS), the capacitance between the conductive layers will increase, which will affect the speed of the integrated circuit and reduce the efficiency. With the complexity and refinement of the integrated circuit, This kind of substrate material is increasingly unable to meet the technical requirements of more advanced processes (65nm or 45nm). The introduction of low dielectric materials (such as CDO, SOG) into the substrate is an inevitable trend in the development of integrated circuit technology, and many applications are produced. Polishing slurries for low dielectric materials. [0003] However, none of the low-dielectric material polishing fluids in the prior art has achieved the perfect combi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
Inventor 荆建芬姚颖宋伟红
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com