Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A chemical mechanical polishing fluid

A chemical mechanical and polishing liquid technology, applied in the direction of polishing composition containing abrasives, etc., can solve the problems of difficult to meet the requirements of CMP polishing, low polishing, etc., and achieve the goal of overcoming uneven polishing rate, increasing selectivity ratio, and increasing polishing rate Effect

Active Publication Date: 2021-08-13
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the development of integrated circuit technology nodes towards smaller sizes, lower polishing defect requirements are put forward for the CMP polishing process. The cerium oxide abrasive particles synthesized by the traditional high-temperature roasting method are multi-angular particles, which inevitably occur during the CMP polishing process. Micro-scratches have been difficult to meet the CMP polishing requirements of advanced manufacturing processes, and the sol-type cerium oxide abrasive particles have a nearly round particle shape, which shows a good application prospect for CMP polishing, and has attracted more and more attention.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A chemical mechanical polishing fluid
  • A chemical mechanical polishing fluid
  • A chemical mechanical polishing fluid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The raw materials selected in this embodiment are all commercially available. According to the formula in Table 1, all components are dissolved and mixed uniformly, and the mass percentage is made up to 100% with water. Potassium hydroxide (KOH) or nitric acid (HNO 3 ) to adjust the pH to 4.5, obtain specific examples as follows:

[0017] Table 1 comparative ratio and embodiment proportioning and concrete implementation result

[0018]

[0019] Carry out the chemical mechanical polishing of TEOS and SiN blank wafer respectively with the polishing solution prepared in the above-mentioned examples and comparative examples, and compare the polishing effects.

[0020] Polishing conditions: the polishing machine is Mirra, IC1010 polishing pad, the rotation speed of Platten and Carrier are 93rpm and 87rpm respectively, the pressure is 1.5psi, 2psi and 5psi, the flow rate of polishing liquid is 150mL / min, and the polishing time is 60 seconds. Polishing liquid 1A was used a...

Embodiment 2

[0025] Table 2 Polishing effect list of polishing liquid of the present invention under different polishing pressures

[0026]

[0027]

[0028] Carry out the polishing rate of TEOS blank wafer under different pressures respectively, the measurement of polishing rate non-uniformity (WIWNU) with the polishing liquid prepared in the above-mentioned embodiment and comparative example. Among them, the polishing conditions are: the polishing machine is Mirra, the IC1010 polishing pad, the rotation speed of Platten and Carrier are 93rpm and 87rpm respectively, the pressure is 4psi and 5psi, the flow rate of polishing solution is 150mL / min, and the polishing time is 60 seconds. The polishing performance of the polishing fluid was evaluated by the polishing removal rate corresponding to the TEOS blank wafer. Wherein, the TEOS polishing rate is calculated by measuring the before and after values ​​of the TEOS film thickness. The TEOS film thickness is measured with a NanoSpec fi...

Embodiment 3

[0033] According to the formula in Table 4, dissolve and mix all components evenly, add potassium hydroxide (KOH) or nitric acid (HNO 3 ) to adjust the pH to 4.5, obtain specific examples as shown in the table below, wherein, benchmark 3A is the same as the composition and content thereof of the 1A polishing fluid of benchmark in table 1:

[0034] Table 4 embodiment proportioning and concrete implementation result

[0035]

[0036] The polishing liquid prepared in the above examples was respectively subjected to chemical mechanical polishing of TEOS blank wafer and SiN, and the polishing effects were compared. The polishing conditions are as follows: the polishing machine is Mirra, IC1010 polishing pad, the rotation speed of Platten and Carrier are 93rpm and 87rpm respectively, the pressure is 1.5psi, 2psi and 5psi, the flow rate of polishing solution is 150mL / min, and the polishing time is 60 seconds. Each polishing solution contains sol-type cerium oxide, and the solid c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a chemical mechanical polishing liquid, which comprises cerium oxide abrasive grains, benzoic acid compounds and a pH regulator. The polishing liquid with the above components can significantly increase the polishing rate of the silicon dioxide dielectric layer, suppress the polishing rate of silicon nitride, improve the selectivity ratio of silicon dioxide to silicon nitride, and overcome the polishing rate in the prior art uneven problem.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing liquid, in particular to a chemical polishing liquid containing cerium oxide abrasive particles and benzoic acid compounds. Background technique [0002] Cerium oxide is an important abrasive particle for CMP polishing fluid. Compared with traditional silica sol abrasive particles, cerium oxide has more efficient polishing characteristics for silicon dioxide materials, and has been widely used in CMP polishing of STI and ILD. At present, the cerium oxide abrasive particles used for CMP polishing are mainly divided into two categories: one is the traditional high-temperature roasting synthetic cerium oxide powder, and the cerium oxide abrasive particle dispersion prepared by ball milling; the other is hydrothermal synthesis The prepared sol-type nano cerium oxide abrasive particles. With the development of integrated circuit technology nodes towards smaller sizes, lower polishing defec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 李守田尹先升贾长征王雨春
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com