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Defect reduction in seeded aluminum nitride crystal growth

A defect and surface defect technology, which is applied in the field of single crystal AlN preparation, can solve problems such as difficult to control bonding, and achieve the effect of eliminating surface defects

Active Publication Date: 2010-03-24
CRYSTAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the sintering process can be difficult to control for good bonding to occur without damaging the seed
Also, it may be difficult to avoid leaving some space between the seed and the seed holder

Method used

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  • Defect reduction in seeded aluminum nitride crystal growth
  • Defect reduction in seeded aluminum nitride crystal growth
  • Defect reduction in seeded aluminum nitride crystal growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

1. Cut into a square large enough to cover the seed area

2. Drop in (1 minute) HF:HNO 3 Solution (RT) 1 minute - removes oil and oxides

3. Rinse with anhydrous methanol 3 times

4. Store in anhydrous methanol while assembling the seed crystal mounting table

5. Dry carefully when removing from anhydrous methanol to avoid solvent contamination

[0076] Using clean builds:

1. Remove the substrate from anhydrous methanol

2. Removal of Al foil from anhydrous methanol

3. Place the foil matte side down and smooth side up on the substrate

4. Eliminate any air bubbles from the back of the foil so that the thin / soft foil rests on the substrate without voids.

5. Seeding from Anhydrous Methanol

6. Place the seed (determined polarity) on the foil

7. Trim excess foil from around the seed with a clean razor blade

[0077] Stack the seed, foil and substrate into the furnace (with Figure 8 The orientation shown is reversed to obtain Figure 9 The orientation shown is such...

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Abstract

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density=lOO <cm>2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Description

[0001] related application [0001] This application claims the benefit and priority of US Provisional Application No. 60 / 880869, filed January 17, 2007, which is hereby incorporated by reference in its entirety. governmental support [0002] This invention was made with the support of the Meitu government under 70NANB4H3051 awarded by the National Institute of Standards and Technology (NIST). Meitu Government has certain rights in this invention. technical field [0003] The present invention relates to the preparation of single crystal AlN, and more particularly to the preparation of single crystal AlN with a lower density of planar defects. Background technique [0004] Aluminum nitride (AlN) holds great promise as a semiconductor material for a variety of applications, such as optoelectronic devices such as short-wavelength light-emitting diodes (LEDs) and lasers, dielectric layers in optical storage media, electronic substrates and where high thermal conductivity ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B23/00
CPCH01L21/02389C30B23/00C30B29/403C30B23/025Y10T428/2982
Inventor R·T·邦德科夫K·E·摩根L·J·肖沃尔特G·A·斯莱克
Owner CRYSTAL