Transverse P-type double diffused metal oxide semiconductor transistor of silicon on insulator

Abstract

The invention relates to a transverse P-type double diffused metal oxide semiconductor transistor of silicon on an insulator, which comprises a semiconductor substrate, wherein a buried oxide layer is arranged on the semiconductor substrate, a high-voltage N-type well and a high-voltage P-type well are arranged on the buried oxide layer, an N-type well and a P-type drift region are arranged on the high-voltage N-type well, the P-type drift region extends to the upper half part of the high-voltage N-type well, and an N-type D well region is arranged on the N-type well, thereby forming a three-layered N-type well structure; meanwhile, a step structure exists in an oxide layer on the surface of an element, and the oxide layer on the P-type drift region is obviously thicker than other parts. The transverse P-type double diffused metal oxide semiconductor transistor can effectively improve the pressurization of the element and can prevent puncture between the drift region and a source region.

Description

technical field [0001] The present invention relates to the field of power semiconductor devices, more specifically, it relates to a [0002] Applied silicon-on-insulator lateral P-type double-diffused metal oxide semiconductor transistor (SOI LDMOS) new structure. Background technique [0003] Power semiconductor devices are the basic electronic components for energy control and conversion in power electronic systems. The continuous development of power electronics technology has opened up a wide range of application fields for semiconductor power devices, and the characteristics of semiconductor power devices such as on-resistance and breakdown voltage determine The basic performance of the power electronic system, such as efficiency and power consumption. Modern power electronic devices and related products represented by lateral double-diffused metal-oxide-semiconductor transistors are playing an increasingly important role in industries, energy, transportation, and oth...

AI Technical Summary

Problems solved by technology

[0005] In related technologies, it has been proposed that the doping concentration of the P-type doped semiconductor region can be reduced, which can not only reduce the peak value of the vertical electric field, improve the vertical withstand voltage value of the device, but also increase the lateral withstand voltage value of the device at the same time, but This approach will greatly increase the on-resistance of the device and increase the power consumption of the device.

[0006] It is also proposed to inject a layer of P-type buffer layer on the surface of the buried oxide layer using lateral uniform variable doping technology to make the surface electric field distribution of the device more flat, thereby increasing the breakdown voltage of the device, but this method is performed on the surface of the buried oxide layer. Horizontal uniform variable doping technology is very difficult to control, and the process is more difficult to realize

Images