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MEMS non-refrigerated two-band infrared detector and preparation method thereof

An infrared detector and dual-band technology, applied in electric radiation detectors, radiation pyrometry, instruments, etc., to achieve the effect of simple steps and easy implementation

Active Publication Date: 2010-05-26
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the prior art, the reflection layer of the detector is fixed, so that the cavity length of the resonant absorption cavity is also fixed, and the absorption can only be enhanced for a certain band

Method used

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  • MEMS non-refrigerated two-band infrared detector and preparation method thereof
  • MEMS non-refrigerated two-band infrared detector and preparation method thereof
  • MEMS non-refrigerated two-band infrared detector and preparation method thereof

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Embodiment Construction

[0037] refer to figure 1 The MEMS uncooled dual-band infrared detector structure includes a silicon substrate 1, a bottom electrode 2, and a microbridge structure anchored on the silicon substrate 1. The key point is that the structure also includes The bridge-type controllable reflective layer 6 on the silicon substrate 1 is anchored in the cavity of the bottom electrode 2 and on the silicon substrate 1 . The main body of the bridge deck of the micro-bridge structure consists of four layers, which are support layer 8, thermistor film 9, infrared absorption layer 10 and protective layer 12, the pier is the lower electrode 3, and the bridge legs are metal columns 13. These structures are all in Fabrication is completed on the silicon substrate 1 . The use of the micro-bridge structure reduces the heat conduction of the device, so that the loss of heat conduction is no longer the main factor limiting the performance of the device.

[0038] The working principle of the MEMS unc...

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Abstract

The invention discloses an MEMS non-refrigerated two-band infrared detector and a preparation method thereof. The detector comprises a silicon substrate, a bottom-layer electrode, and a micro bridge structure anchored on the silicon substrate, and is characterized by also comprising a bridge type controllable reflecting layer which is arranged in a cavity formed by the micro bridge structure and the silicon substrate and anchored on both sides of the bottom-layer electrode and the silicon substrate, wherein the bridge type controllable reflecting layer can be adjusted upward or downward by using anchor points playing a supporting role and a static electricity drive arranged between the bridge type controllable reflecting layer and the bottom-layer electrode, so that the cavity length of a resonance absorption cavity is controllable, and the response at two bands with wavelengths of 3 to 5mum and 8 to 12mum respectively is realized. The method for preparing the detector adopts the surface sacrificial layer process twice to prepare the micro bridge structure and the bridge type controllable reflecting layer, so that the method is simple in process, and easily realized.

Description

technical field [0001] The invention belongs to the technical field of uncooled infrared detection, in particular to a MEMS uncooled dual-band infrared detector and a preparation method thereof. Background technique [0002] Uncooled infrared detection technology covers many fields from civil to national defense, and has become the most popular direction of infrared detection technology. This technology enables us to obtain uncooled infrared detectors with high sensitivity at room temperature. In addition, it also has the advantages of low cost, small size, light weight, low power consumption and wide response band. [0003] The basic working principle of the uncooled infrared detector is that the radiation of the target object is absorbed by the uncooled infrared detector, which causes the temperature of the heat-sensitive film to rise. Since the heat-sensitive film has a temperature-resistance (TCR) characteristic, its resistance value will Change, and transmit this chang...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/22G01J5/02B81B7/02B81C1/00
Inventor 胥超徐永青
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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