Driver for isolating edge signal

Abstract

The invention discloses a driver for isolating an edge signal, which comprises a signal conversion unit, an isolated transmission unit, a signal recovery unit and a complementary level transformation power amplification unit, wherein the signal conversion unit is used for converting a drive input signal into two circuits of complementary signals; the isolated transmission unit is connected with the signal conversion unit and used for performing isolated transmission on the two circuits of the complementary signals; the signal recovery unit is connected with the isolated transmission unit and used for recovering the two circuit of the complementary signals transmitted by the isolated transmission unit into drive input signals; and the complementary level transformation power amplification unit is connected with the signal recovery unit and used for performing power amplification on the drive input signals acquired through recovery by the signal recovery unit. The driver substantially improves the driving performance of MOSFET and IGBT and has short drive delay; typical opening delay is less than or equal to 150 ns; the closing delay is less than or equal to 120 ns; and the driver has the capacity of long-term operation and at least 20A transient drive and has high rising and falling edge, no duty cycle limit and low static electricity consumption.

Description

technical field [0001] The invention relates to the technical field of transistors, in particular to an edge signal isolation driver. Background technique [0002] With the rapid development of semiconductor technology, MOSEFT (Metal-Oxide-Semiconductor Field-Effect Transistor, power field effect transistor) and IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) are widely used. The three poles of MOSFET are source, drain and gate, and the three poles of IGBT are collector, emitter and gate. [0003] The control gate of high-power MOSFET and IGBT is equivalent to a capacitor. In high power MOSFET and IGBT switching applications, fast transient turn-on of the gate is desired as the switching frequency increases. To achieve high transient power, low transmission delay, low power loss and low cost for isolated drive signal transmission is a problem that needs to be weighed. [0004] A prior art IGBT driver such as figure 1 As shown, the driver can a...

AI Technical Summary

Problems solved by technology

[0006] The problem to be solved by the present invention is to provide an edge signal isolation driver to overcome the defects of too long driving delay and insufficient driving power in the prior art

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