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Preparation method of crystal silicon solar cell

A technology of solar cells and crystalline silicon, applied in the field of solar photovoltaic utilization, can solve the problems of expensive, unsuitable for large-scale, and low-cost industrial production, and achieve the effects of easy operation, good application prospects, and improved conversion efficiency

Inactive Publication Date: 2010-06-09
CSI CELLS CO LTD +6
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the use of lithography, laser and other equipment, the price is expensive, and it is not suitable for large-scale and low-cost industrial production

Method used

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  • Preparation method of crystal silicon solar cell
  • Preparation method of crystal silicon solar cell
  • Preparation method of crystal silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] See attached figure 1 Shown, a kind of preparation method of crystalline silicon solar cell comprises the steps:

[0024] (1) Clean the silicon wafer and make the surface texture;

[0025] (2) Perform phosphorus diffusion to form a PN junction;

[0026] (3) Etching, dephosphorous silicon glass cleaning;

[0027] (4) Form a passivation layer on the front surface by PECVD or magnetron sputtering;

[0028] (5) A single-layer passivation layer is formed on the back surface by thermal oxidation, and the structure of the passivation layer is SiO 2 (The passivation layer can also be a-Si, SiC, SiNx, etc.), with a thickness of 20nm;

[0029] (6) Utilize the method of ink-jet printing corrosive paste, open contact window on the back passivation layer, the technological process of opening contact window on the surface of solar cell back passivation layer is: adopt the method for ink-jet printing to passivate on the back side Print corrosive slurry on the layer, the wet weigh...

Embodiment 2

[0035] See attached figure 2 Shown, a kind of preparation method of crystalline silicon solar cell comprises the steps:

[0036] (1) Clean the silicon wafer and make the surface texture;

[0037] (2) Perform phosphorus diffusion to form a PN junction;

[0038] (3) Etching, dephosphorous silicon glass cleaning;

[0039] (4) Form a passivation layer on the front surface by PECVD or magnetron sputtering;

[0040] (5) A single-layer passivation layer is formed on the back surface by PECVD, and the structure of the passivation layer is SiO 2 (The passivation layer can also be a-Si, SiC, SiNx, etc.), with a thickness of 50nm;

[0041] (6) Utilize the method of ink-jet printing corrosive paste, open contact window on the back passivation layer, the technological process of opening contact window on the surface of solar cell back passivation layer is: adopt the method for ink-jet printing to passivate on the back side Print corrosive slurry on the layer, the wet weight of corros...

Embodiment 3

[0047] See attached image 3 Shown, a kind of preparation method of crystalline silicon solar cell comprises the steps:

[0048] (1) Clean the silicon wafer and make the surface texture;

[0049] (2) Perform phosphorus diffusion to form a PN junction;

[0050] (3) Etching, dephosphorous silicon glass cleaning;

[0051] (4) Form a passivation layer on the front surface by PECVD or magnetron sputtering;

[0052] (5) Utilize the PECVD method to form a single-layer passivation layer on the back surface, the structure of the passivation layer is SiNx (the passivation layer can also be a-Si, SiC, SiO 2 etc.), the thickness is 60nm;

[0053] (6) Utilize the method of ink-jet printing corrosive paste, open contact window on the back passivation layer, the technological process of opening contact window on the surface of solar cell back passivation layer is: adopt the method for ink-jet printing to passivate on the back side Print corrosive slurry on the layer, the wet weight of c...

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Abstract

The invention discloses a preparation method of a crystal silicon solar cell, comprising necessary processes for preparing the crystal silicon solar cell and the following steps of forming a single passivation layer on the back surface of the cell; printing corrosive pulps on the single passivation layer on the back surface by utilizing ink-jet printing, then drying the corrosive passivation layer and cleaning and removing the pulps so as to form a window with local contact; and then forming back surface contact on the window by utilizing screen printing. Proved by tests, the solar cell structure with back surface passivation and local contact can efficiently enhance long wave response and back surface reflection of the solar cell so as to enhance the conversion efficiency of the solar cell.

Description

technical field [0001] The invention belongs to the field of photovoltaic utilization of solar energy, and in particular relates to a preparation method of a crystalline silicon solar cell. Background technique [0002] Solar energy is an inexhaustible renewable energy source for human beings, and it is also a clean energy source that does not produce any environmental pollution. Among the effective utilization of solar energy, solar photovoltaic utilization is the fastest growing and most dynamic research field in recent years, and it is one of the most watched projects. To this end, people have researched and developed solar cells. The production of solar cells is mainly based on semiconductor materials. Its working principle is to use photoelectric materials to absorb light energy and then undergo photoelectron conversion reactions. According to the different materials used, solar cells can be divided into: 1. Silicon solar cells 2. Inorganic salts such as Gallium arsen...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王立建王栩生朱冉庆房海冬章灵军
Owner CSI CELLS CO LTD
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