Conducting structure for semiconductor integrated circuit and forming method thereof

Abstract

The invention relates to a conducting structure for a semiconductor integrated circuit and a forming method thereof. The semiconductor integrated circuit comprises a gasket and a protection layer, wherein the protection layer locally covers the gasket so as to define a first opening area with a first transverse size and ensure that the conducting structure is suitable for passing through the first opening area to be electrically connected with the gasket. The conducting structure covers the first opening area and a part of the protection layer so as to provide conducting property with lower impedance between the gasket and a bump, and meanwhile, the conducting structure on other positions of the protection layer has no break points and also has the characteristic for ensuring the conduction to be more stable.

Description

[0001] This application is a divisional application of the invention patent application with the application number 200710084091.1 and the invention title "conductive structure for semiconductor integrated circuits and its forming method" submitted by the applicant on February 16, 2007. technical field [0002] The present invention is a conductive structure; in particular, a conductive structure for a semiconductor integrated circuit and its forming method. Background technique [0003] Bump plating has developed many technologies in the fields of microelectronics and microsystems, such as the connection between flat panel displays (FPD) and driver ICs, and the conduction on gallium arsenide chips. The bump electroplating technology is used at different stages in the wire and air bridge technology, and in the manufacture of the X-ray mask in the LIGA technology. [0004] Taking the connection between the circuit board and the IC chip as an example, the IC chip can be connec...

AI Technical Summary

Problems solved by technology

However, the equivalent resistance of the underlying metal with increased thickness will increase, and since the main function of the underlying metal is to serve as an adhesive layer between bumps and pads, its impedance itself is relatively high. Therefore, if the underlying metal as an adhesive layer has a thicker thickness , will increase the impedance between the bump and the pad, which is not conducive to the electrical connection between the chip and the circuit board

All of the above situations will affect the electroplating effect, reduce the yield rate of bump electroplating, and require post-processing reformation or scrap the chip

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