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Shallow groove isolation polishing solution

A technology of polishing liquid and shallow grooves, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state device manufacturing, etc., to achieve the effect of stabilizing the polishing rate

Inactive Publication Date: 2010-07-21
昆山市百益电子科技材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are few such products in China, so it is necessary to develop a chemical mechanical polishing fluid with nano-scale cerium oxide abrasive grains to meet the growing demand of the domestic semiconductor industry

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] After the cerium oxide abrasive is synthesized by the precipitation method, the cerium oxide abrasive polishing fluid is prepared:

[0027] 1. Add 3g of surfactant OP-10 to 50g of water and mix and stir. 2. Slowly add 40g of cerium oxide into the aqueous solution containing surfactant, stir evenly and let it stand for more than 4 hours. 3. Slowly Add the mixture (2g of triethylamine and 2g of ethylenediaminetetraacetic acid), 4. add 1.5g of polycarboxylic acid, mix and stir, 5. adjust the pH to 4-5 with a pH regulator, filter and purify, and pack.

Embodiment 2

[0029] After the cerium oxide abrasive is synthesized by the precipitation method, the cerium oxide abrasive polishing fluid is prepared:

[0030] 1. Add 32g of surfactant TX-10 to 500g of water and mix and stir; 2. Slowly add 400g of cerium oxide into the aqueous solution containing surfactant, stir well and let it stand for more than 4 hours; 3. Slowly Add the mixture (20g of diisobutylamine and 20g of citric acid); 4. Add 15g of polyamide and mix and stir; 5. Adjust the pH to 4-5 with a pH regulator, filter and purify, and pack.

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PUM

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Abstract

The invention discloses shallow groove isolation polishing solution. The technical scheme is that the shallow groove isolation polishing solution comprises the following components in percentage by weight: 1 to 50 percent of cerium oxide grinding material, 0.2 to 10 percent of pH modifying agent, 0.1 to 5 percent of chelating agent, 0.01 to 5 percent of surfactant, 0.1 to 10 percent of special additive, and the balance of deionized water, wherein the components are mixed and stirred to form the shallow groove isolation polishing solution. By adopting the technical scheme of the invention, the shallow groove isolation polishing solution has very strong reactivity to an oxide, has a high polishing rate, and can easily meet the requirement on obtaining the high selection ratio of the oxide to a nitride.

Description

technical field [0001] The invention relates to a shallow trench isolation polishing liquid. Background technique [0002] With the development of semiconductor manufacturing technology, the requirements for characteristic line width are becoming more and more refined, and the number of wires per unit area has been greatly increased. In order to increase the effective use area of ​​components, chemical mechanical polishing technology (CMP) has become an indispensable and very important technology in semiconductor process technology, because it has the characteristics of comprehensive planarization compared with other planarization technologies. In terms of component isolation technology, the isolation technology of local oxidation of silicon (LOCOS) was used in the past, but when the semiconductor enters the node below 0.25um, LOCOS has the following insurmountable difficulties: bird's beak effect, protruding shape is unfavorable for planarization, ion implantation Ingress ...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L21/3105
Inventor 闵学勇邢振林
Owner 昆山市百益电子科技材料有限公司
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