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Reinforced-depletion-mode part combination switch circuit capable of being reliably turned off

A technology of depletion switch and combined switch, which is applied in electronic switches, electrical components, pulse technology, etc., can solve the problems that depletion devices cannot be turned off, and achieve the effect of small conduction internal resistance and excellent performance

Inactive Publication Date: 2010-07-21
XIAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the depletion-type device is still in the conduction state when the voltage between the gate and the source is zero, it is difficult to be directly used in the switching power supply, because the control drive circuit of the existing switching power supply is designed for the enhanced switching device, that is to say , it provides a pulse frequency modulation signal of about 0 ~ 15V to control the on and off of the switching device. If the control signal is directly used to drive the depletion-type switching device, the depletion-type device cannot be turned off

Method used

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  • Reinforced-depletion-mode part combination switch circuit capable of being reliably turned off
  • Reinforced-depletion-mode part combination switch circuit capable of being reliably turned off
  • Reinforced-depletion-mode part combination switch circuit capable of being reliably turned off

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Embodiment 1

[0017] see figure 1 , the combined switching circuit consists of a depletion switching device (hereinafter referred to as depletion device) Q1, an N-channel enhancement device (hereinafter referred to as enhancement device) Q2, a first voltage dividing resistor R1 and a second voltage limiting resistor R1 Composed of piezoresistor R2, the source S of the depletion-mode device Q1 is connected to the drain D of the enhancement-mode device Q2 to form a series connection of the two switching devices, wherein the drain D of the depletion-mode device Q1 serves as the combined switching circuit The source S of the enhanced device Q2 is connected to the reference ground of the circuit as the other end of the combined switch circuit, the gate G of the depletion device Q1 is connected to the reference ground, and the gate of the enhanced device Q2 is used as The control end of the combined switch circuit is connected to the external control drive circuit, the resistors R1 and R2 are con...

Embodiment 2

[0020] In order to further improve the safety and practicability of the combined switch, a current sampling resistor Rs can be connected in series between the source S of the enhanced device Q2 and the ground, and its series structure can be as follows figure 2 , 3 Two forms are shown. The current flowing through the combined switch can be sampled through the sampling resistor Rs, and the external control circuit can be used to protect it or control the current to make it work under a safe current.

Embodiment 3

[0022] see Figure 4 , the figure shows an application example of this combination switch circuit, which is a step-up DC-DC converter in current control mode, where the virtual box is the combination switch circuit, which replaces the original enhanced The switching device completes the functions of turning on and turning off reliably under the control of the original control drive circuit. Experiments show that the invention can not only make the converter work normally, but also can exert the excellent performance of the gallium nitride switching device, greatly improve the power density and efficiency of the converter, and can improve the reliability of the converter.

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Abstract

The invention discloses a reinforced-depletion-mode part combination switch circuit capable of being reliably turned off, which mainly consists of a depletion-mode gallium nitride switch part Q1, N-channel reinforced-mode part Q2 and voltage division and voltage limiting resistors R1 and R2. The reinforced-mode part is serially connected with the depletion-mode part to form a combination switch, and the on-off control of the depletion-mode part is realized by controlling the reinforced part, so the difficulty that the prior control drive circuit cannot utilize the depletion-mode switch part can be effectively solved. At the same time, through the meticulous design of the circuit and the reasonable selection of the element parameters, the excellent performance of the depletion-mode gallium nitride switch part can be adequately played, so the high-frequency performance, high-voltage resistance and low conductivity resistance of the combination switch are better than that of the single reinforced-mode switch part. When the reinforced-depletion-mode part combination switch circuit is used for turning off a power source or a converter, the high frequency, miniaturization and high efficiency of the converter can be realized, and the reliability of the converter can be further improved.

Description

technical field [0001] The invention relates to a switching circuit, which is mainly used in switching power supplies and various power converters, more precisely, it is an enhanced-depletion type device combined switching circuit which can be reliably turned off for power conversion. Background technique [0002] In recent years, due to the breakthrough of gallium nitride heterojunction epitaxy technology, the research and development of the third-generation wide bandgap semiconductor gallium nitride device has developed rapidly. Due to its excellent physical and chemical characteristics and potential technical advantages, it has attracted extensive attention from the industry. and attention. [0003] The main characteristics and excellent performance of GaN switching devices include: (1) High electron mobility: that is, it has the excellent characteristics of fast switching speed and low conduction internal resistance, so it has great application potential in high frequenc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567
Inventor 刘树林曹晓生杨波王媛媛
Owner XIAN UNIV OF SCI & TECH
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