Method for improving performance of lead-free ferroelectric film and lead-free ferroelectric film prepared by same

A technology of lead-free ferroelectric and ferroelectric thin films, applied in the field of lead-free ferroelectric thin films, can solve problems such as insignificant effects, difficult control, and influence on film performance

Active Publication Date: 2010-08-11
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, through the research on the leakage current of ferroelectric thin films, the methods usually adopted to reduce the leakage current include: selecting different electrodes, changing the thickness of the film, changing the annealing temperature, using different doping, etc., although these methods are also to a certain extent It can play a role in reducing the leakage current of ferroelectric thin films, but these methods are usually realized by changing the preparat...

Method used

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  • Method for improving performance of lead-free ferroelectric film and lead-free ferroelectric film prepared by same
  • Method for improving performance of lead-free ferroelectric film and lead-free ferroelectric film prepared by same
  • Method for improving performance of lead-free ferroelectric film and lead-free ferroelectric film prepared by same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1), with electronic balance, according to the mol ratio of Bi and Nd be 3.15: 0.85 to take by weighing bismuth nitrate (excessive 4%) 1.6051g and neodymium acetate 0.2734g respectively, then add glacial acetic acid solvent, magnetically stir at normal temperature to complete dissolved to form a mixed solution of bismuth nitrate and neodymium acetate. According to the molar ratio of Bi, Nd and Ti being 3.15:0.85:3, weigh 1.0313 g of butyl titanate, slowly add it to the above mixed solution, then add glacial acetic acid and ethylene glycol methyl ether solvent (the molar ratio of which is 1 : 1), continue to stir for 2h to obtain 20ml of 0.05mol / L precursor solution, after standing for 7 days, filter to obtain clear and transparent lavender Bi 3.15 Nd 0.85 Ti 3 o 12 Precursor solution.

[0029] Coating the precursor solution on Pt / Ti / SiO 2 On the / Si substrate, adopt the spin coating process, use the homogenizer, first spin the glue at a low speed, the speed is 500r...

Embodiment 2

[0032] (1) To prepare a lead-free ferroelectric thin film, the steps are the same as in Example 1.

[0033] (2), using the gamma rays produced by the decay of cobalt 60 as the irradiation source, the energy of the rays is 1.33MeV, and at room temperature, the prepared neodymium-doped bismuth titanate lead-free ferroelectric thin film is irradiated, and the total irradiation dose It is 40 Mrad. After irradiation, a ferroelectric thin film with reduced leakage current is obtained.

Embodiment 3

[0035] (1) To prepare a lead-free ferroelectric thin film, the steps are the same as in Example 1.

[0036] (2), using the gamma rays produced by the decay of cobalt 60 as the irradiation source, the energy of the rays is 1.33MeV, and at room temperature, the prepared neodymium-doped bismuth titanate lead-free ferroelectric thin film is irradiated, and the total irradiation dose It is 70 Mrad. After irradiation, a ferroelectric thin film with reduced leakage current is obtained.

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Abstract

The invention discloses a method for improving the performance of a lead-free ferroelectric film and the lead-free ferroelectric film prepared by the same, in particular to a method for reducing the drain current of a lead-free ferroelectric film by utilizing the ionizing irradiation effect and the lead-free ferroelectric film obtained by the same, belonging to the field of lead-free ferroelectric films. Energy carrying particle beams such as charged particles or gamma rays and the like are used for irradiating the lead-free ferroelectric film at room temperature, the total irradiation dose is 10Mrad-100Mrad, and the ferroelectric film with the reduced drain current can be obtained after irradiation. The invention has significance of improving the working stability and the service life of a ferroelectric memory and reducing the heating productivity.

Description

technical field [0001] The present invention relates to a method for improving the performance of lead-free ferroelectric thin film and the prepared lead-free ferroelectric thin film, in particular to a method for improving the performance of lead-free ferroelectric thin film by utilizing ionizing radiation effect and the prepared lead-free ferroelectric thin film. ferroelectric thin film. Background technique [0002] The irradiation effect is the change in the physical, mechanical properties and organizational structure of the material caused by the interaction between rays and matter. Using this principle, the material can be irradiated to achieve the purpose of modifying the material. The radiation effect has been widely and effectively applied to greatly improve the mechanical, physical and chemical properties of various materials, devices and tools. For example, γ-ray irradiation can be used to color crystal gemstones, and irradiation modification can enable polymer m...

Claims

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Application Information

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IPC IPC(8): C04B41/80
Inventor 马颖时群吉周益春
Owner XIANGTAN UNIV
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