Preparation method for piezoelectric bimorph of micro-electromechanical system
A piezoelectric bimorph, micro-electromechanical system technology, applied in piezoelectric devices/electrostrictive devices and other directions, can solve problems such as poor performance stability of piezoelectric bimorphs, and achieve the effects of low cost and simple preparation
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Embodiment 1
[0025] Such as figure 1 As shown, this embodiment is a cantilever beam array composed of multiple piezoelectric bimorphs, each piezoelectric bimorph includes piezoelectric films 1 and 3, and a metal substrate 2, wherein: the upper and lower surfaces of the metal substrate 2 are coated with pressure Electric films 1 and 3.
[0026] The metal substrate is a copper sheet with a thickness of 10 μm; the piezoelectric films 1 and 3 are PZT films with a thickness of 10 μm; the metal substrates are in the shape of multiple Ts, and the shape of the piezoelectric film is is a rectangle.
[0027] The present embodiment is prepared through the following steps:
[0028] The first step is to clean the silicon wafer substrate, and sputter a layer of Cr / Cu metal layer on the surface of the substrate as an electroplating seed layer, with a thickness of about 0.15 μm;
[0029] The second step is to use AZ4903 photoresist on the surface of the metal seed layer at a speed of 2000 rpm for 30 se...
Embodiment 2
[0039] Such as figure 2 As shown, this embodiment is a cantilever beam array composed of multiple piezoelectric bimorphs, each piezoelectric bimorph includes piezoelectric films 1 and 3, and a metal substrate 2, wherein: the upper and lower surfaces of the metal substrate 2 are coated with pressure Electric films 1 and 3.
[0040] The metal substrate is a copper sheet with a thickness of 10 μm; the piezoelectric films 1 and 3 are PZT films with a thickness of 10 μm; the metal substrate is a plurality of trapezoidal zigzag shapes, and the shape of the piezoelectric film is trapezoidal.
[0041] The present embodiment is prepared through the following steps:
[0042] The first step is to clean the silicon wafer substrate, and sputter a layer of Cr / Cu metal layer on the surface of the substrate as an electroplating seed layer, with a thickness of about 0.15 μm;
[0043] The second step is to use AZ4903 photoresist on the surface of the metal seed layer at a speed of 2000 rpm ...
Embodiment 3
[0053] Such as image 3 As shown, this embodiment is a cantilever beam array composed of multiple piezoelectric bimorphs, each piezoelectric bimorph includes piezoelectric films 1 and 3, and a metal substrate 2, wherein: the upper and lower surfaces of the metal substrate 2 are coated with pressure Electric films 1 and 3.
[0054] The metal substrate is a copper sheet with a thickness of 10 μm; the piezoelectric films 1 and 3 are PZT films with a thickness of 10 μm; the metal substrate is a plurality of inverted trapezoidal zigzag shapes, and the piezoelectric film shape is an inverted trapezoid.
[0055] The present embodiment is prepared through the following steps:
[0056] The first step is to clean the silicon wafer substrate, and sputter a layer of Cr / Cu metal layer on the surface of the substrate as an electroplating seed layer, with a thickness of about 0.15 μm;
[0057]The second step is to use AZ4903 photoresist on the surface of the metal seed layer at a speed of...
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Abstract
Description
Claims
Application Information
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