Device mounting board and method of manufacturing the board, semiconductor module and method of manufacturing the module
A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as reducing connection reliability, and achieve the effect of improving connection reliability
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Embodiment 1
[0032] figure 1 It is a schematic cross-sectional view showing the structure of the element mounting substrate 100 and the semiconductor module 1 in the first embodiment. The semiconductor module 1 has a structure in which a semiconductor element 300 is flip-chip connected to the element mounting substrate 100 .
[0033] The semiconductor element 300 includes: a semiconductor substrate 310 , an element electrode 330 and an element protection layer 340 .
[0034] The semiconductor substrate 310 is, for example, a P-type silicon wafer. On the main surface S1 side of the semiconductor substrate 310 ( figure 1 An integrated circuit (IC) or a large-scale integrated circuit (LS1) (not shown) is formed using known techniques.
[0035] Element electrodes 330 connected to the integrated circuit are provided on the main surface S1 serving as the mounting surface. The element electrode 330 includes an electrode portion 331 and a metal layer 332 laminated on the surface of the electro...
Embodiment 2
[0071] In the first embodiment described above, the semiconductor module 1 is formed by crimping the copper plate 200 and the semiconductor substrate 310 (semiconductor element 300 ) via the insulating resin layer 10 , but the semiconductor module 1 may also be formed as follows. This embodiment will be described below. The basic structure of the semiconductor module 1 and the manufacturing process of the protruding electrodes 30 are basically the same as those of the first embodiment. Therefore, the same reference numerals are assigned to the same configurations as in the first embodiment, and the description thereof is appropriately omitted, and the configurations different from the first embodiment will be mainly described.
[0072] Figure 8 A to 8D are cross-sectional views showing the steps of the semiconductor module manufacturing method of the second embodiment.
[0073] first as Figure 8 As shown in A, follow the image 3 A~ image 3 D and Figure 4 A~ Figure...
Embodiment 3
[0079] In the above-mentioned first embodiment, the metal layer 32 is composed of multiple layers, and the surface of the Ni layer 34 in contact with the protruding portion 31 has a substantially convex shape and its peripheral region has a curved shape, but the surface of other layers in the metal layer 32 may also be substantially convex. shape. This embodiment will be described below. The basic structure of the semiconductor module 1 is basically the same as that of the first embodiment. Therefore, the same reference numerals are assigned to the same configurations as in the first embodiment, and the description thereof is appropriately omitted, and the configurations different from the first embodiment will be mainly described.
[0080] Figure 9 A~ Figure 9 D is a cross-sectional view showing the steps of the semiconductor module manufacturing method of the third embodiment.
[0081] Such as Figure 9 As shown in D, the protruding electrode 30 of this embodiment inc...
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