Method for selectively doping emitting stage on surface of crystalline silicon cell film

Abstract

The invention relates to a method for selectively doping an emitting stage on the surface of a crystalline silicon cell film, comprising the steps of dry-method masking, wet-method masking, laser etching on a shallow slot, grid shallow slot scouring, heavy doping of the grid shallow slot, clearing phosphor and removing film, surface light doping and scouring. As the traditional one-step masking is changed into masking by using a dry method and a wet method, two basic requirements of subsequent heavy doping and light doping are satisfied; an interface between a mask and a silicon slice is tightly combined, which can effectively resist diffusion for selective doping; the mask has enough thickness which can bear the reduction effect of scouring; in a same oxidation furnace, the method for combining dry-method oxidation with wet-method oxidation is adopted, thereby ensuring the favorable quality of the contact surface of a dry-method oxidization mask and the silicon slice; the wet-method oxidization ensures that the growing speed of the mask is improved by 10 times, which enables the mask to grow to the thickness of about 1 mu m in short time, thereby overcoming the defect of slow epitaxial growth of dry-method oxidization, remarkably shortening the time of the production process, and improving the yield.

Description

【Technical field】 [0001] The invention relates to a manufacturing process of a crystalline silicon solar cell, in particular to a method for manufacturing a selective emission level by doping the surface of a crystalline silicon solar cell. 【Background technique】 [0002] With the growing demand for renewable green energy, crystalline silicon solar cell technology has been greatly promoted and developed. The manufacturing process of crystalline silicon solar cells includes surface texturing, surface doping junction, antireflection film deposition, positive and negative electrode formation and other processes. In the industrialized manufacturing method, the silicon chip surface doping junction scheme is the main step that limits the improvement of the cell conversion efficiency. At present, the current surface doping and junction making process of solar cells using the screen printing process is as follows: [0003] The surface of the electrode is directly doped on the sili...

AI Technical Summary

Problems solved by technology

Although this doping junction method enables solar cells to adopt mature screen printing technology to meet the requirements of industrial mass production, however, the gate surface of the cell does not have a selective emission level due to the surface doping junction. , so the conversion efficiency of the cell is limited and it is difficult to further improve

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