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Method for preparing nanometer CuInS2

A cuins2, nanotechnology, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the problems of high inconvenience industrial application, expensive equipment, harsh reaction conditions, etc., to achieve uniform morphology, reduce Equipment requirements, the effect of easy response

Inactive Publication Date: 2010-11-17
HENAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a kind of nano CuInS 2 The preparation method overcomes the defects of the existing method that the reaction conditions are harsh and difficult to control, the equipment is expensive and the cost is high, and it is not convenient for industrial application

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  • Method for preparing nanometer CuInS2
  • Method for preparing nanometer CuInS2
  • Method for preparing nanometer CuInS2

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Embodiment 1

[0021] 25 mL of dioctyl phthalate containing CTAB with a concentration of 0.08 M was heated to 80 °C, and TAA was added after 5 min to keep the temperature unchanged. The additional concentration is 0.2M Cu(acac) 2 with In(acac) 3 The solution was mixed in another 5 mL of dioctyl phthalate and warmed to 80°C. Cu(acac) 2 with In(acac) 3 The mixed solution was added to the solution containing TAA, and the temperature was raised to 180 °C for 2 h. Prepared nano-CuInS 2 The TEM and electron diffraction patterns of the particles are shown in figure 1 ; XRD pattern see figure 2 .

Embodiment 2

[0023] 25 mL of dioctyl phthalate containing CTAB with a concentration of 0.08 M was heated to 80 °C, and TAA was added after 5 min to keep the temperature unchanged. The additional concentration is 0.2M Cu(acac) 2 with In(acac) 3 The solution was mixed with another 5 mL of dioctyl phthalate and warmed to 80°C. Cu(acac) 2 with In(acac) 3 The mixed solution was added to the solution containing TAA, and the temperature was raised to 140°C, 160°C, 180°C, and 200°C, respectively. The reaction was carried out for 2h. Prepared nano-CuInS 2 The TEM and electron diffraction patterns of the particles are shown in image 3 ; XRD pattern see Figure 4 .

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Abstract

The invention belongs to the field of new energy of photoelectric materials, in particular relates to a method for preparing nanometer CuInS2. In the method, dioctyl phthalate is used as a solvent; and the CuInS2 is prepared by reacting Cu(acac), indium acetylacetonate and thioacetamide serving as a copper source, an indium source and a sulfur source respectively under normal pressure under the action of a surfactant, namely cetyl trimethyl ammonium bromide. The method for preparing the nanometer CuInS2 has low cost, is easy to operate, and provides a new path for industrial large-scale synthesis.

Description

(1) Technical field [0001] The invention belongs to the field of new energy sources of optoelectronic materials, in particular to a nanometer CuInS 2 preparation method. (2) Background technology [0002] In recent years, nanomaterials have received extensive attention due to their special physical and chemical properties and their potential applications in nanodevices, especially transition metal sulfides with special optical and electrical properties have attracted more and more attention. Nano CuInS 2 It is a direct band gap semiconductor material, a very important semiconductor material for making solar cells, and has been commercialized. As CuInS 2 The light absorption coefficient of the material can reach 10 5 ×cm -1 , is the highest among the existing solar cells. The photoelectric conversion efficiency of solar cells made of this material has reached 20%. In addition, CIS2 solar cells have strong radiation resistance, no light-induced degradation, and their serv...

Claims

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Application Information

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IPC IPC(8): C01G15/00
Inventor 武四新陈星庞山
Owner HENAN UNIVERSITY
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