Method for designing transparent electrode device
A technology of electrode design and transparent electrodes, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve problems such as difficult optical measurement methods
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0040] Various details and specific embodiments of the present invention will be described in detail.
[0041] The present invention proposes a new electrode design. Based on this electrode design, the device can be various forms of transistors, especially transparent GaN field effect transistors. The type of transistor can be one or more of the following, but not limited to: ① high electron mobility transistor, heterojunction insulated gate field effect transistor (HFET); ② metal-oxide-semiconductor field effect transistor (MOSFET) or Metal-insulating layer-semiconductor field effect transistor (MISFET); ③Bipolar junction transistor (BJT); ④Other transistors, such as JFET, IGBT, MESFET, etc.
[0042] Transistor materials can be one or more of the following, but not limited to: ①Gallium electrode AlxGayIn1-x-yN; ②Nitrogen electrode AlxGayIn1-x-yN; ③Gallium electrode and nitrogen electrode mixture; ④GaN and other materials Combinations, such as a combination of GaN and GaAs.
[0043...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com