Collision ionization type field effect transistor of sinking channel and manufacture method thereof

Abstract

The invention belongs to the technical field of power semiconductor devices, and in particular relates to a collision ionization type field effect transistor of a sinking channel and a manufacture method thereof. The collision ionization type field effect transistor comprises a semiconductor substrate, a drain region positioned at the bottom of the substrate and provided with a first doping type,a groove structure positioned in the substrate, a grid electrode covering in the groove, a dielectric layer positioned between the grid electrode and the semiconductor substrate, a source region positioned at both sides of the groove and the top of the substrate and provided with a second doping type, and an insulation dielectric layer positioned between the groove and the source region. The use of the sinking type channel structure and the collision ionization working principle ensures that the transistor can improve drive current while inhibiting a subthreshold oscillation range so as to further improve the switching speed and the response frequency of a device and simultaneously reduce the off-state power consumption of the device. The field effect transistor is very suitable for the manufacture of integrated circuit chips, particularly the manufacture of the high-speed high-power chips.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a power semiconductor field effect transistor and a manufacturing method thereof, in particular to an impact ionization field effect transistor with a recessed channel and a manufacturing method thereof. Background technique [0002] Power semiconductor devices are the internal driving force of the continuous development of power-electronic systems, especially in terms of energy saving, dynamic control, noise reduction, etc., and have irreplaceable effects. Power semiconductors are mainly used to control the energy transfer between the energy source and the load, and have the characteristics of high precision, fast speed and low power consumption. In the past 20 years, power devices and their packaging technology have developed rapidly, especially power MOS transistors, which have replaced traditional bipolar transistors in many application fields ...

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Problems solved by technology

[0005] However, since both UMOSFET and IGBT adopt a gate-controlled n-p-n or p-n-p structure, their minimum subthreshold swing (SS) is limited to 60mv / dec, which limits the switching speed of the transistor

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