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Preparation method of LED chip

A light-emitting diode and chip technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor brightness consistency of products, and achieve the effect of improving poor brightness consistency

Active Publication Date: 2010-12-15
EPILIGHT TECH
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  • Claims
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a light-emitting diode chip, so as to avoid problems such as poor brightness consistency of packaged products caused by uneven phosphor coating.

Method used

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  • Preparation method of LED chip
  • Preparation method of LED chip
  • Preparation method of LED chip

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Embodiment Construction

[0014] The fabrication method of the flip-chip light emitting diode chip of the present invention will be described in detail below with reference to the accompanying drawings.

[0015] The preparation method of light-emitting diode chip of the present invention comprises the following steps:

[0016] First, an array of light-emitting diode chips is grown on a wafer-shaped growth substrate by epitaxy, wherein each light-emitting diode chip includes a semiconductor substrate layer, an N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, and an N-type semiconductor layer. The structure formed by the N electrode on the upper layer and the P electrode on the P-type semiconductor layer can be a vertical structure, a front-chip structure or a flip-chip structure. Such as figure 2 As shown, it is a light-emitting diode chip with a positive structure, which includes a sapphire substrate layer, an N-GaN layer, a quantum well layer, a P-GaN layer, an N elect...

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Abstract

The invention provides a preparation method of LED chips. The method comprises the following steps of: firstly, growing an LED chip array on a growth substrate by adopting an epitaxial method, wherein each LED chip comprises a substrate layer, an N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, an N electrode on the N-type semiconductor layer and a P electrode on the P-type semiconductor layer; then, grinding and cleaning a wafer with the formed LED chip array; coating fluorescent powder on the light-emitting surface of each LED; drying the fluorescent powder; cracking the wafer coated with the fluorescent powder to form single LED chips; and finally, encapsulating each single LED chip. According to the invention, the problems that the encapsulated product has uneven brightness, uncertain performance, and the like, caused by the uneven coating of the fluorescent powder can be effectively avoided.

Description

technical field [0001] The invention relates to a method for preparing a light-emitting diode chip, in particular to a method for preparing a light-emitting diode chip coated with fluorescent powder before splitting. Background technique [0002] Light-emitting diodes have long service life, short start-up time, firm structure, energy saving, illuminants close to point light sources, wide range of thin lamp materials, no need to apply reflectors, low voltage, no ultraviolet radiation, and are safer to use in public environments. Mercury-free production has many advantages such as environmental protection and energy conservation. Therefore, it is widely used in building exterior lighting, landscape lighting, signage and indicative lighting, indoor space display lighting, entertainment venues and stage lighting, video screens and Industrial design and other fields have a wide range of applications. In particular, high-power light-emitting diodes, because they may realize semi...

Claims

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Application Information

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IPC IPC(8): H01L33/50H01L21/78
Inventor 张楠齐胜利朱广敏叶青潘尧波郝茂盛
Owner EPILIGHT TECH
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