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Silica-based packaging light-emitting diode

A light-emitting diode and silicon-based technology, applied in electrical components, electrical solid devices, circuits, etc., can solve problems such as poor heat dissipation performance, diode brightness attenuation, safety accidents, etc., and achieve excellent heat dissipation performance and extended heat dissipation performance

Inactive Publication Date: 2010-12-29
SICHUAN JIUZHOU OPTOELECTRONIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the traditional low-power light-emitting diode packaging technology solves the bright spots in the high-power light-emitting area, the original design of this method is to use the packaging form at room temperature, which is mainly used in the field of indication or display, and heat dissipation. The performance is poor. If this type of packaging is used for lighting, it will inevitably generate high temperature due to excessive power. If the heat dissipation cannot be cooled in time to reduce the temperature, the brightness of the diode will be attenuated so that it cannot be used, and its service life will be shortened. , and because the temperature is always too high during use, it is also prone to safety accidents

Method used

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  • Silica-based packaging light-emitting diode
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Embodiment Construction

[0011] The present invention will be further elaborated below in conjunction with the accompanying drawings.

[0012] Such as figure 1 As shown, the silicon-based package light-emitting diode of the present invention includes a package bracket 1 and an electrode 2 at the bottom thereof, the inside of the package bracket 1 is filled with a mixture 3 of silica gel and phosphor powder, and a chip 4 is fixed at the bottom of the package bracket 1, and the chip 4 passes through The gold wire 5 is connected to the electrode 2 at the bottom of the package holder 1 . The packaging bracket 1 is a silicon substrate bracket, wherein the silicon substrate on the packaging bracket is made of silicon material, and the silicon substrate 6 surrounds the outside of the packaging bracket 1, and a transparent cover 7 is fixed above the silicon substrate 6 bracket .

[0013] The encapsulation bracket adopted in the silicon-based encapsulation light-emitting diode of the present invention first ...

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Abstract

The invention discloses a silica-based packaging light-emitting diode comprising a packaging support (1) and an electrode (2) at the bottom of the packaging support. A mixture (3) of silica gel and fluorescent powder is filled inside the packaging support; a wafer (4) is fixed on the bottom packaging support (1) and is connected with the electrode (2) at the bottom of the packaging support (1) through a gold wire (5); the bottom packaging support (1) is a silica-based plate support; and a silica-based plate (6) is encircled around the outer side of the packaging support (1). The production process of the silica-based packaging light-emitting diode uses a research process of an epitaxial wafer grade to control the consistency of color temperature and effectively improve the yield; and the silica-based packaging light-emitting diode is suitable for miniaturization and the placement design of multiple chips. In order to meet the requirements on the market and clients, the product volume is further reduced, and the product cost is lowered. The product can be excellently applied to the LED illumination equipment, the LED television and the LED display, thereby having wide application range.

Description

technical field [0001] The invention relates to a light-emitting diode, more specifically to a silicon-based package light-emitting diode. Background technique [0002] LED is the abbreviation of light emitting diode, also known as light-emitting diode. Since the world's first red light-emitting diode came out, LED technology has experienced a rapid development process, and light-emitting diodes that emit various colors of light have been born one after another. In 1993, Japan first achieved technological breakthroughs in blue GaN-LEDs, and in 1996 realized white LEDs. In recent years, the field of lighting is developing towards the fourth generation of lighting sources, that is, towards the direction of white LED-based semiconductor lighting sources. White light LED has the advantages of no pollution, low power consumption, high reliability, long life, etc. It is a kind of green lighting source that conforms to the purpose of environmental protection and energy saving advo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/56H01L33/64
CPCH01L2224/48091
Inventor 仁恒李君飞钟健
Owner SICHUAN JIUZHOU OPTOELECTRONIC TECH CO LTD