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Non-volatile memory

A memory unit, non-volatile technology, applied in the direction of static memory, read-only memory, digital memory information, etc., can solve the problems of affecting data storage ability and unreliable operation, so as to reduce the influence of reliability and improve reliability degree of effect

Active Publication Date: 2014-03-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, data retention capabilities are severely affected, so these devices cannot be operated reliably

Method used

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Embodiment Construction

[0043] Hereinafter, each embodiment is described in detail and examples accompanied by accompanying drawings are used as a reference basis of the present invention. In the drawings or descriptions in the specification, the same reference numerals are used for similar or identical parts. And in the drawings, the shapes or thicknesses of the embodiments may be enlarged, and marked for simplicity or convenience.

[0044] Embodiments of the present invention can provide a non-volatile memory cell with improved reliability and provide mitigation of the impact of high temperature on the reliability of the non-volatile memory cell. In embodiments of the present invention, some elements may be formed on a silicon substrate using standard integrated circuit deposition processes such as evaporation or sputtering. A magnet, which may be formed from a ferromagnetic material such as nickel (Ni), may alternatively be an electromagnet. A contact may be formed of a metal such as copper (Cu)...

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Abstract

Non-volatile memories can have data retention problems at high temperatures reducing the reliability of such devices. A non-volatile memory cell is described having a magnet (30), a ferromagnetic switching element (24) and heating means (26). The non-volatile memory cell has a set position having a low resistance state and a reset position having a high resistance state. The non-volatile memory is set by applying a magnetic field to the switching element (24) causing it to move to the set position. The non-volatile memory cell is reset by the heating means (26) which causes the switching element (24) to return to the reset position. The switching element is formed from a ferromagnetic material or a ferromagnetic shape memory alloy. This structure can have improved reliability at higher temperatures than previously described non-volatile memories.

Description

technical field [0001] The invention relates to a nonvolatile memory, in particular to an electromechanical nonvolatile memory. Background technique [0002] Non-volatile memory is a computer storage element that retains data when power is not applied. Non-volatile memories widely used today include, for example, read-only memory, flash memory, optical disks, and magnetic disk devices. [0003] Flash memory is widely used in memory cards and Universal Serial Bus (USB) devices to store data and transfer data between computers and other digital devices such as cameras or mobile phones. Floating gate transistors can be used as flash memory, and the floating gates generally include MOS transistors compatiblely coupled to some second gates. [0004] Because the floating gate is electrically isolated from the second gate, any charge captured by the floating gate can be stored for a long period of time without power. The charge stored on the floating gate can be changed by apply...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/02
CPCG11C11/15G11C23/00G11C7/04
Inventor 穆罕默德·包特齐薛
Owner TAIWAN SEMICON MFG CO LTD
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