Semiconductor luminescent device and manufacturing method thereof
A technology for light-emitting devices and semiconductors, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem of limited resolution of LED display screens, and achieve the effect of improving resolution
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[0035] An embodiment of preparing a quantum well structure of the present invention includes:
[0036] Depositing a silicon oxide film layer on the substrate;
[0037] Etching periodic circular holes on the silicon oxide film layer with a femtosecond laser, exposing the substrate under the silicon oxide film layer through the periodic circular holes;
[0038] growing an n-type GaN film on the exposed substrate;
[0039] growing multiple periods of GaInN / GaN quantum wells on the n-type GaN film;
[0040] A p-type GaN film is grown on the GaInN / GaN quantum well.
[0041] According to the present invention, the substrate can be a sapphire substrate or a lithium aluminate crystal substrate, preferably a lithium aluminate crystal substrate, more preferably a lithium aluminate crystal with a (100) crystal plane or a (302) crystal plane The substrate, the surface of the lithium aluminate crystal substrate should be smooth, and the root mean square roughness is preferably less than...
Embodiment 1
[0051] Prepare a lithium aluminate crystal substrate with a (100) crystal plane with a root mean square roughness of 5 angstroms, and chemical vapor deposit a silicon oxide film layer with a thickness of 100 nm on the lithium aluminate crystal substrate;
[0052] Using a femtosecond pulsed laser at 3J / em 2 The focusing power density etches circular holes arranged in a rectangle on the silicon oxide film layer, the distance between adjacent circular holes in each row of the rectangular array is equal to the distance between adjacent rows, and the diameter of each circular hole is 30nm, the distance between the centers of adjacent circular holes in each row is 90nm, and the depth of the circular holes is 100nm. Through the circular holes, the lithium aluminate crystal substrate under the silicon oxide film layer is exposed;
[0053] A 100nm n-type GaN film is deposited on the exposed lithium aluminate crystal substrate by metal chemical vapor deposition, and the n-type GaN film ...
Embodiment 2
[0056] Prepare a lithium aluminate crystal substrate with a (302) crystal plane with a root mean square roughness of 4 angstroms, and chemical vapor deposit a silicon oxide film layer with a thickness of 300 nm on the lithium aluminate crystal substrate;
[0057] Using a femtosecond pulsed laser at 8J / cm 2 The focus power density etches circular holes in a rectangular array on the silicon oxide film layer, the distance between adjacent circular holes in each row of the rectangular array is equal to the distance between adjacent rows, and the diameter of each circular hole is 60nm, the distance between the centers of adjacent circular holes in each row is 180nm, and the depth of the circular holes is 300nm. Through the circular holes, the lithium aluminate crystal substrate under the silicon oxide film layer is exposed;
[0058] A 300nm n-type GaN film is deposited on the exposed lithium aluminate crystal substrate by metal chemical vapor deposition, and the n-type GaN film jus...
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