Epitaxial material stress control-based GaN thick film self-separation method

An epitaxial material and stress control technology, applied in the field of material stress control and epitaxial growth, can solve the problems that the substrate cannot be reused and the process is complicated, and achieve good usability and controllability, and the effect of process simplification

Inactive Publication Date: 2011-02-02
PEKING UNIV
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Problems solved by technology

[0009] Generally speaking, although there are many types of separation technologies for heterogeneous substrates and epitaxial materials, the existing technologies have disadvantages such as complicated process, substrates cannot be reused, and suitable insertion layers need to be found. Therefore, a new method needs to be proposed. technical solutions to overcome these problems

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  • Epitaxial material stress control-based GaN thick film self-separation method

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specific Embodiment approach

[0036] GaN thick film self-separation design scheme such as image 3 As shown, the growth window of stress distribution controlled by gradient modulation and jump modulation adopted in the embodiment of the present invention is: temperature 900°C-1100°C, pressure 100torr-650torr, ratio of 5-3 to 10-100, carrier gas is a mixture of hydrogen and nitrogen gas. The specific implementation is as follows:

[0037] 1. Before growth, put the sapphire substrate in acetone, alcohol and deionized water for ten minutes, and then dry the substrate with a nitrogen gun and put it into the reaction chamber.

[0038] 2. During growth, firstly, hydrogen gas is introduced into the reaction chamber at high temperature to treat the sapphire substrate to remove the adsorbate on its surface.

[0039] 3. After that, the sapphire substrate is nitrided with ammonia gas at high temperature, and then the growth of GaN single crystal material starts.

[0040] 4. According to image 3 The first stage of ...

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Abstract

The invention discloses an epitaxial material stress control-based GaN thick film self-separation method, which comprises the following steps of: pretreating a substrate material; growing an epitaxial material on the substrate, gradually modulating process conditions to ensure that the stress of the epitaxial material is gradually concentrated to a preset self-separation position; when the thickness of the epitaxial material reaches the preset self-separation position, and performing jumping modulation on the process conditions to ensure that the stress is jumped at the preset position; gradually modulating the process conditions again to ensure that the stress of the epitaxial material is gradually released along with the increase of the thickness, namely the stress is reversely concentrated to the preset position; and finishing the epitaxial growth, and gradually reducing temperature to make stress difference on the two sides of the preset self-separation position further amplified so as to realize the self-separation of the monocrystalline thick film at the preset position. The method can effectively control the integral distribution of the stress in the epitaxial material and well realize the self-separation of the epitaxial material on the basis of ensuring the quality of the epitaxial material.

Description

technical field [0001] The invention relates to the field of material stress control and epitaxial growth, in particular to a method for realizing self-separation of thick film GaN material by controlling the stress of epitaxial material. Background technique [0002] With the rapid development of microelectronic technology and optoelectronic technology, a wide variety of microelectronic components and optoelectronic components have been increasingly widely used. However, the existence of stress in epitaxial materials directly affects the stability and reliability of microelectronic components and optoelectronic components. For example, in semiconductors, the existence of stress will affect the band gap drift, and then affect the luminous color of LEDs; in superconductors, the existence of stress will affect the superconducting transition temperature; in optical components, stress will affect light transmittance and Reflectivity. Therefore, the stress control problem of ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/16C30B29/40
Inventor 张国义吴洁君杜彦浩于彤军杨志坚康香宁贾传宇孙永健罗伟科刘鹏
Owner PEKING UNIV
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