Ink jet printing and laser interference exposure based circuit interconnecting method
A technology of laser interference and circuit interconnection, applied in the field of semiconductors, can solve problems such as difficulty in practical application and complex preparation process, and achieve the effects of increasing flexibility, high-precision interconnection, and reducing costs
Inactive Publication Date: 2012-11-28
SHANGHAI JIAOTONG UNIV
View PDF1 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] After searching the existing technology, it was found that Chinese Patent Application No. 200680035406.7 records a method of using carbon nanotubes whose electron mobility is much higher than that of metals to realize thinner circuit interconnection lines. This technology does not require the preparation of high-precision masks ; However, the preparation process of carbon nanotube interconnection network is too complicated, and various methods need to be adopted to control the orientation of carbon nanotubes, which is difficult to be practical
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0018] The embodiments of the present invention are described in detail below. This embodiment is implemented on the premise of the technical solution of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the following implementation example.
[0019] Such as figure 1 As shown, two transistors have been prepared on the substrate 3 . The transistors on the left and right have the same structure. Let’s take the transistor on the left as an example. 1 is the drain electrode, 2 is the source electrode. It can be seen from the figure that these two electrodes are interdigitated electrodes, and 3 is the gate electrode. The structures of these two transistors can be varied, and the bottom-contact and top-gate structures described herein are taken as an example for illustration.
[0020] Such as figure 2 and image 3 Shown is the specific method of intercon...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| width | aaaaa | aaaaa |
| diameter | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to an ink jet printing and laser interference exposure based circuit interconnecting method in the technical field of semiconductors. The method comprises the following steps of: preparing an insulating layer on a substrate of a transistor array; then preparing a conductive film on the insulating layer; manufacturing into a conductive gate by adopting a laser interference exposure method; and finally, respectively printing an insulating layer etchant and a conductive material on the conductive gate by adopting an ink jet printing mode to manufacture a conductive through hole to realize the circuit connection of a thin film transistor array. In the invention, base high-precision parallel metal wires are realized by utilizing the laser interference exposure, meanwhile,the metal wires can be partially modified through an ink jet printing technology, and most importantly, the interconnection between two layers of vertical metal wires is realized.
Description
technical field [0001] The invention relates to a method in the technical field of semiconductors, in particular to a circuit interconnection method based on inkjet printing and laser interference exposure. Background technique [0002] The development of circuit systems has enabled us to enter the information age. At present, various innovative electronic products continue to appear, such as flexible electronic products, radio frequency tags, and so on. These new electronic devices bring more creative electronic products into our lives. However, for wider market applications and due to the limitation of materials used, it is necessary to break through the shackles of traditional circuit system preparation processes in order to increase the integration of these electronic products and at the same time greatly reduce the production cost. [0003] In the traditional high-density circuit preparation process, the circuit interconnection is realized through the mask and photolit...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768G03F7/20
Inventor 崔晴宇郭小军叶志成李争光
Owner SHANGHAI JIAOTONG UNIV