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Preparation method of copper indium selenium sulphur (CuInSe2-xSx) film for solar battery

A technology of solar cells and thin films, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of poisonous and restricted Se elements, and achieve the effects of low cost, simple equipment, and mild reaction conditions

Inactive Publication Date: 2011-03-02
上海太阳能电池研究与发展中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, from the perspective of raw materials, In, Ga and Se are all rare elements, and Se element is toxic, which will become an important factor limiting the large-scale promotion of this type of thin film battery

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Preparation of electrodeposition solution

[0035] The electrodeposition solution was prepared with deionized water at room temperature. Added substances and their concentrations are: 2.5mM CuCl 2 , 9.0mM InCl 3 , 9.5mM SeO 2 , 200mM LiCl.

[0036] Electrodeposition of thin films

[0037] Put the above-prepared solution in an electrodeposition container, the counter electrode is a platinum sheet, the reference electrode is a saturated calomel electrode, the working electrode is a Mo-coated glass, the area is 2cm*2cm, and the electrodeposition adopts a constant potential of -0.55V. The temperature is 25°C, the deposition time is 70 minutes, the solution does not need to be stirred during electrodeposition, and it is operated at room temperature.

[0038] Treatment of Electrodeposited Films

[0039] A part of the electrodeposited thin film is subjected to sulfurization treatment, and the other part is subjected to selenization treatment.

[0040] Sample 1: vulcaniz...

Embodiment 2

[0051] Preparation of electrodeposition solution

[0052] The electrodeposition solution was prepared with deionized water at room temperature. Added substances and their concentrations are: 2.5mM CuCl 2 , 9.0mM InCl 3 , 25mM Na 2 S 2 o 3 , 200mM LiCl.

[0053] Electrodeposition of thin films

[0054] Put the above-prepared solution in an electrodeposition container, the counter electrode is a platinum sheet, the reference electrode is a saturated calomel electrode, the working electrode is ITO glass, the area is 2cm*2cm, the electrodeposition adopts a constant potential of -1.0V, and the solution temperature 25°C, deposition time 30min, no need to stir the solution during electrodeposition, and operate at room temperature.

[0055] Sulfurization of Electrodeposited Thin Films

[0056] Place the electrodeposited film in a vulcanization furnace with H 2 S gas is a source of gaseous sulfur.

[0057] First replace the air in the furnace with Ar gas, the operation is as ...

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PUM

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Abstract

The invention discloses a preparation method of copper indium selenium sulphur (CuInSe2-xSx) film for a solar battery. The method is based on the following two steps of electrochemically co-depositing a precursor film and carrying out vulcanizing or selenizing treatment. The preparation method is simple in preparation equipment and temperate in reaction conditions, and greatly reduces the preparation costs of the film. Furthermore, the method is further prominently characterized in that the contents of Se and S in the CuInSe2-xSx (the numeric area of x is 0-2) film are easy to adjust by changing preparation parameters, thereby changing the relevant performances of the film such as the forbidden band width to meet the actual requirement.

Description

technical field [0001] The invention belongs to the field of new energy sources of photoelectric materials, relates to thin-film solar cell materials, and specifically refers to a copper indium selenium sulfur (CuInSe) prepared based on electrochemical deposition technology. 2-x S x ) method of semiconductor thin film. Background technique [0002] Thin-film solar cells are a new generation of solar cells with the most potential for industrialization after crystalline silicon solar cells. Currently, cadmium telluride, amorphous silicon, and copper indium gallium selenide are the main representatives. Among them, copper indium gallium selenide (abbreviated as CIGS) can be considered to represent the absorption layer material according to the chemical formula Cu(In x , Ga 1-x )(S y Se 1-y ) 2 (0≤x≤1, 0≤y≤1) series of thin-film solar cell materials, including CuInSe 2 , CuIn(Se, S) 2 、CuInS 2 、Cu(In,Ga)Se 2 、Cu(In,Ga)S 2 Wait. CIGS is one of the thin-film solar cel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/56C25D5/48H01L31/18
CPCY02P70/50
Inventor 左少华江锦春崔艳峰禇君浩
Owner 上海太阳能电池研究与发展中心