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Near-infrared room temperature luminescent device based on automatic ion implantation of SOI (silicon on insulator) material

A light-emitting device and near-infrared technology, which is applied in the field of optoelectronics, can solve problems such as no public reports, and achieve the effects of simple process, improved external quantum efficiency, and low power consumption

Inactive Publication Date: 2011-03-02
YUNNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Through document retrieval, do not see the public report identical with the present invention

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The present invention is by injecting Si into the silicon film layer of SOI structure + , to obtain efficient D at room temperature 1 Line light-emitting device, the specific steps are as follows:

[0019] Step 1: Select a P-type single crystal Si wafer with a crystal orientation of (100), polish it on one side, and clean the substrate with the existing technology.

[0020] Step 2: Prepare thin film surface silicon layer and SiO with uniform thickness by SIMOX method 2 buried layer.

[0021] Step 3: Si + Ion implanted silicon thin film layer

[0022] Si by ion implanter + Self-implanted silicon thin film layer, the injection dose is 10 12 cm -2 , the injection energy is 200keV. Si + After the ion implantation is completed, the S + Ions were implanted into this layer, and the implantation energy and dose were 80keV and 10 14 cm -2 , S + Due to diffusion will form n + type layer. The included angle between the ion beam and the surface normal of the silicon ...

Embodiment 2

[0028] Step 1, step 2, step 4, and step 5 are the same as in embodiment 1.

[0029] The difference in step 3 is:

[0030] Si by ion implanter + Self-implanted silicon thin film layer, the injection dose is 10 14 cm -2 , the injection energy is 200keV.

Embodiment 3

[0032] Basically with embodiment 1. The differences are:

[0033] Si by ion implanter + Self-implanted silicon thin film layer, the injection dose is 10 16 cm -2 , the injection energy is 200keV.

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PUM

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Abstract

The invention relates to a near-infrared room temperature luminescent device based on an automatic ion implantation SOI(silicon on insulator) material, belonging to the field of photoelectronic technique. The luminescent device in the invention gives out strong light at room temperature within a range from 1.50 to 1.60mu m and gives out light based on defect rings and point defects around the defect rings. The device comprises the following components from bottom to top: an eigen Si substrate, an oxidized Si isolating layer with injected oxygen, a p<+> type Si lower electrode layer, a luminous active layer and a n<+> type Si upper electrode layer, wherein external quatum efficiency of the luminescent device ranges from 0.05% to 0.8%.The device has the following outstanding advantages: 1, the luminescent device which is fabricated based on an SOI p-i-n structure inherits various advantages of the SOI structure, wherein the ion injection area and the luminous active layer are both arranged on a thin silicon layer; 2, the luminescent device can give out light stably at room temperature and the problem that the near-infrared LED device and the laser device can only normally work at low temperature is solved; and 3, the external quatum efficiency of the luminescent device is improved to 0.05-0.8%, so that luminous intensity of the luminescent device is enhanced.

Description

Technical field: [0001] The invention relates to a near-infrared room temperature strong light-emitting device, in particular to self-implantation of Si into the silicon thin film layer of SOI material + Forming a high-efficiency light-emitting device at room temperature belongs to the field of optoelectronic technology. Background technique [0002] With its outstanding advantages such as full color light, infinite color mixing, rapid switching, shock resistance, moisture resistance, cold temperature, ultra-long life, and less maintenance, semiconductor lighting sources have been widely used in lighting fields such as urban landscapes, commercial large screens, traffic lights, mobile phones, and PDA backlights. A wide range of applications makes semiconductor light sources the most popular and eye-catching light sources in the world. Especially as the luminous efficiency of LED is constantly improving, semiconductor lighting is considered to be a new type of solid-state co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06
Inventor 王茺杨宇韦冬周原李亮
Owner YUNNAN UNIV