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Method for preparing ultrapure copper ingot

A technology of ultra-pure copper and preparation process, which is applied in the field of preparation of ultra-pure copper ingots, which can solve problems such as the gap between density and theoretical density, difficulty in meeting special user requirements, and difficulty in avoiding pollution of melting crucibles, etc., to achieve diversification , improve product quality, optimize the effect of physical properties

Inactive Publication Date: 2011-03-16
JINCHUAN GROUP LIMITED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the electrolytic production method, the gaseous impurities in the metal are difficult to be removed, the obtained metal density is too far from its theoretical density, and there are too many internal defects; the product specification is also very single, which cannot meet the requirements of various users; through the electron beam The high-purity copper ingot prepared by other fire method equipment is difficult to avoid the pollution of the melting crucible to the metal, and there is still a gap between the density and the theoretical density, and it is difficult to meet the requirements of special users

Method used

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  • Method for preparing ultrapure copper ingot
  • Method for preparing ultrapure copper ingot
  • Method for preparing ultrapure copper ingot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Manually adjust the process parameters as follows for ultra-pure copper ingot casting:

[0023] Filament voltage

8V

Filament current

20A

Auxiliary high voltage

1.0kV

bombardment current

1.3A

main high voltage

19kV

electron beam

2.2A

a focusing current

90mA

Two focusing currents

70mA

triple focus current

30mA

Accelerating pole current

54.2mA

A column of hole current

64mA

Two-lane hole current

63mA

[0024] Test and analyze the samples of the ultrapure copper ingots prepared above. 68 non-gas elements were detected and analyzed by GDMS (glow discharge mass spectrometry), and 4 gas contents were detected and analyzed by LECO method. The results are shown in Table 1. The total non-gas impurity content is about 1ppm, and the purity of ultrapure copper ingot reaches 99.9999 %.

[0025] Table 1 Purity analysis results of ultrapure copper ingots

[0026] ...

Embodiment 2

[0029] Manually adjust the process parameters as follows for ultra-pure copper ingot casting:

[0030] Filament voltage

8.6V

Filament current

24A

Auxiliary high voltage

1.2kV

bombardment current

1.5A

main high voltage

21kV

electron beam

2.4A

a focusing current

100mA

Two focusing currents

74mA

triple focus current

46mA

Accelerating pole current

63.1mA

A column of hole current

72.5mA

Two-lane hole current

70.3mA

[0031] Test and analyze the samples of the ultrapure copper ingots prepared above. 68 non-gas elements were detected and analyzed by GDMS (glow discharge mass spectrometry), and 4 kinds of gas content were detected and analyzed by LECO method. The results are shown in Table 2. The total non-gas impurity content is about 0.8ppm, and the purity of ultra-pure copper ingot reaches 99.99992%.

[0032] Table 2 Purity analysis results of ultrapure copper i...

Embodiment 3

[0036] Manually adjust the process parameters as follows for ultra-pure copper ingot casting:

[0037] Filament voltage

9.3V

Filament current

28A

Auxiliary high voltage

1.3kV

bombardment current

1.6A

main high voltage

23kV

electron beam

2.4A

a focusing current

110mA

Two focusing currents

77mA

triple focus current

50mA

Accelerating pole current

66.5mA

A column of hole current

83mA

Two-lane hole current

79.4mA

[0038] Test and analyze the samples of the ultrapure copper ingots prepared above. 68 non-gas elements were detected and analyzed by GDMS (glow discharge mass spectrometry), and 4 gas contents were detected and analyzed by LECO method. The results are shown in Table 3. The total non-gas impurity content is about 0.8ppm, and the purity of the ultra-pure copper ingot reaches 0.8 ppm. 99.99992%.

[0039] Table 3 Purity analysis results of ultra-pure copp...

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Abstract

The invention relates to a method for preparing an ultrapure copper ingot by performing electron beam melting technology on an ultrapure copper plate obtained by adopting an electrolytic method in an electron beam melting furnace. The method is characterized in that: in the preparation process, a 6 N (the purity is more than or equal to 99.9999 percent) electrolytic ultrapure copper plate is taken as a raw material, is subjected to surface cleaning and is subjected to the electron beam melting technology in the electron beam melting furnace so as to obtain a 6 N or more than 6 N ultrapure copper ingot. The invention provides a method which can effectively solve the problems that: the product specification form is single, several impurity elements are difficult to remove and the consistency is low, reduces the production cost, saves the energy, realizes the diversification of product forms, optimizes the physical property, improves the product quality and fully meets the use requirement of various downstream customers.

Description

technical field [0001] A method for preparing ultrapure copper ingots, in particular to a method for preparing ultrapure copper ingots from 6N (purity ≥99.9999%) ultrapure copper plates obtained by electrolysis through an electron beam melting furnace and related electron beam melting technology. Background technique [0002] 6N (purity ≥99.9999%) ultra-pure copper is a new type of metal material with excellent performance, which is used to prepare large electronic tubes, advanced special alloys, copper oxide rectifier components, ultra-miniature transformer windings, ground wires connecting chips and lead frames, lasers Mirror, microelectronics industry sputtering target and ion coating, high-fidelity audio wire, large-scale integrated circuit bonding wire and other fields, mainly used in the electronics industry. With the gradual expansion of circuit integration scale, reduction of device feature size, reduction of line width and increase of wiring layers, the preparation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B15/14
Inventor 闫忠强白延利张亚东冯晓锐柴明强郭廷宏艾琳王敏何忠
Owner JINCHUAN GROUP LIMITED
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