TFT array structure and manufacturing method thereof

Abstract

The invention discloses a thin film transistor (TFT) array structure and a manufacturing method thereof. The TFT array structure comprises a substrate, gate electrode scanning lines and a gate electrode integrated with the gate electrode scanning lines into a whole formed on the substrate, a gate electrode insulating layer formed on the gate electrode, a semiconductor active layer formed on the gate electrode insulating layer, data lines, a drain electrode and a source electrode integrated with the data lines formed on the gate electrode insulating layer, a common electrode formed on the gate electrode insulating layer, a passivation layer formed on the data lines, the drain electrode, the source electrode and the common electrode, and a pixel electrode formed on the passivation layer, wherein the drain electrode and the source electrode are partially lapped to the semiconductor active layer; a passivation via hole is formed on the drain electrode; the pixel electrode is connected with the drain electrode through the passivation layer via hole on the drain electrode; and the common electrode is at least made of a transparent material partially. The TFT array structure can improve the aperture opening ratio, optimize a storage capacitor and reduce lead resistance.

Description

technical field [0001] The invention relates to flat panel display technology, in particular to a thin film transistor (TFT) array structure and a manufacturing method thereof. Background technique [0002] With the focus on information display and the increasing demand for portable information media, research on flat panel display technology is flourishing. Among them, thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, referred to as TFT-LCD) has the advantages of micro power consumption, low operating voltage, no X-ray radiation, high definition, small size, etc. In portable electronic products such as computers (Personal Digital Assistant, PDA). With the continuous increase of display screen size, resolution and display color types, achieving low power consumption and high brightness display is the main development direction of TFT-LCD at present, which puts higher demands on the structure and manufacturing process of TFT array. Re...

AI Technical Summary

Problems solved by technology

Although this method can better improve the aperture ratio, it is easy to cause point or line defects in the array on the one hand and increase the The parasitic capacitance on the signal line is reduced, and the delay phenomenon in signal transmission is aggravated

In addition, the lower electrode of the storage capacitor (that is, the gate electrode scanning line) is a light-shielding material, so it is impossible to take into account both the improvement of the aperture ratio and the optimization of the storage capacitor.

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