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Thin film transistor and active matrix display

A technology of thin-film transistors and transistors, which is applied in the direction of transistors, semiconductor devices, electric solid-state devices, etc., can solve the problems of high-frequency performance degradation, occupied area, and increased sensitivity to environmental conditions, etc., and achieve the effect of small TFT off-state current

Inactive Publication Date: 2011-04-06
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this approach is that the need for two additional contacts takes up area
[0027] Although the prior art has described techniques for reducing leakage currents associated with the edges of semiconductor islands, there are challenges in manufacturing difficulty, yield, size increase, increased sensitivity to environmental conditions, degradation of high-frequency performance, or Significant flaws in all aspects of the combination

Method used

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  • Thin film transistor and active matrix display
  • Thin film transistor and active matrix display
  • Thin film transistor and active matrix display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0082] The first embodiment describes a TFT in which semiconductor islands are patterned to minimize the depletion region area of ​​the isolation diode.

[0083] Figure 15 This embodiment is illustrated in plan view for the case of a relatively wide channel nTFT. The TFT consists of a semiconductor film (Si in most cases: amorphous, polycrystalline or crystalline) and a gate electrode, which can be located above or below the 2 A dielectric such as is separated from it. Furthermore, there may be two gate electrodes located above and below the semiconductor island, either gate electrode may be left floating instead of being connected to the supply voltage.

[0084] In semiconductor island 1501, source 1502 and drain 1504 regions are heavily doped n-type (with first and second doping concentrations, which are typically substantially equal), and are surrounded by channel region 1508 Separately, the channel region 1508 is located directly above or directly below the gate electr...

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PUM

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Abstract

A thin film transistor is formed in a semi-conductor island on an insulating substrate. The transistor comprises a source (1502) and a drain (1504) of first conductivity type and a channel (1508) of a second opposite conductivity type. The channel is overlapped by one or more insulated gates (1510) and is provided with isolation diodes. Each isolation diode comprises a first region (1506) which is lightly doped and a second region (1512) which is heavily doped and of the second conductivity type. The diodes are not overlapped by the gate (1510). The first and second regions (1506, 1512) extend away from the channel (1508) by less than the length of the adjacent source or drain. The lightly doped region (1506) extends away from the source or drain and the heavily doped region (1512) extends away from the lightly doped region such that the first and second regions (1506, 1512) form a p-n junction with the adjacent source or drain in a direction orthogonal to the main conduction path of the transistor but not parallel to the main conduction path.

Description

technical field [0001] The present invention relates to thin film transistors (TFTs), for example of the type produced in the manufacture of display substrates for active matrix liquid crystal displays (AMLCDs). The invention also relates to an active matrix display comprising such a transistor. Background technique [0002] in the attached picture figure 1 An AMLCD substrate is shown. In the display pixel matrix 102, a TFT is adjacent to each pixel, or in the case of a color display, each sub-pixel, to control the level of emitted light. TFTs are also widely used in display gate and source drivers 104 and 106 respectively, and may also be used in sensor driver circuitry 108 . Many products utilize such AMLCDs (eg, mobile phones and personal digital assistants (PDAs)). Improvements in TFT electrical performance make it possible to minimize the power consumption of the AMLCD, or alternatively enable higher performance. TFTs can also be used in circuits for "system-on-pan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786
CPCH01L29/78615H01L29/78609G02F2201/58G02F1/136277H01L27/12H01L29/78621
Inventor 加瑞斯·尼古拉斯本杰明·詹姆斯·哈德文苏奈·沙赫
Owner SHARP KK