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Method for performing quantitative analysis on SiGe thin film by using energy-dispersive X-ray spectroscopy

A quantitative analysis and characteristic spectrum technology, applied in the direction of material analysis using radiation, material analysis using wave/particle radiation, material analysis, etc., can solve the problems of expensive SIMS machines, surge in process costs, high measurement costs, etc., to achieve the analysis cycle Short, operable, and low analysis cost

Active Publication Date: 2012-11-07
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0002] At present, in the field of integrated circuit technology, SIMS (Secondary Ion Mass Spectrometer) is usually used to directly measure the depth and atomic percentage of SiGe thin films for composition determination and quality assurance monitoring. The measurement accuracy is high, but SIMS machines are expensive and popular. Low cost and high measurement cost. In the case of outsourced analysis, if regular inspection of the production line is required, the process cost will increase sharply

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  • Method for performing quantitative analysis on SiGe thin film by using energy-dispersive X-ray spectroscopy
  • Method for performing quantitative analysis on SiGe thin film by using energy-dispersive X-ray spectroscopy
  • Method for performing quantitative analysis on SiGe thin film by using energy-dispersive X-ray spectroscopy

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Embodiment Construction

[0025] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0026] On the basis of the existing TEM (transmission electron microscope) / EDS (X-ray dispersive spectrometer), the present invention develops a set of quantitative analysis methods for SiGe component analysis, partially replacing the original SIMS analysis method. This method is to fill in the technical gaps of the SiGe thin film project and the quantitative analysis of materials by X-ray characteristic spectrum. The method specifically includes the following steps:

[0027] (1) Use CVD (Chemical Vapor Deposition) SiGe standard multilayer gradient film as a standard sample, and use its SIMS data as the standard composition (atomic percent, at%; or weight percent wt%), the method is in the thickness range of SiGe Take 20 points of equal thickness inside, and find out the corresponding atomic percentage of Ge and Si, see figure 1 ;

[0028] ...

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Abstract

The invention discloses a method for performing quantitative analysis on a SiGe thin film by using an X-ray characteristic spectrum. In the method, CVD (chemical vapor deposition) SiGe(silicon germanium) standard multilayer gradient thin film is used as a standard sample, a secondary ion mass spectrometer (SIMS) is used to measure the components of the thin film, and the components are used as the standard components in the energy-dispersive X-ray spectroscopic (EDS) analysis on the SiGe; and the technical method (including a Cliff-Lorimer facor for performing quantitative analysis on the SiGe technical thin film, namely a coefficient KSiGe, obtained by experiments) for performing the EDS quantitative analysis on the SiGe technical thin film is thus obtained. The method fills a blank in SiGe thin film project and technique for performing material quantitative analysis by energy-dispersive X-ray spectroscopy. The method adopts a simple process, has high maneuverability of the method, and can reduce production expense greatly and improve efficiency.

Description

technical field [0001] The invention relates to a process method for semiconductor integrated circuits, in particular to a method for quantitatively analyzing SiGe (silicon germanium) thin films by using X-ray characteristic spectrum. Background technique [0002] At present, in the field of integrated circuit technology, SIMS (Secondary Ion Mass Spectrometer) is usually used to directly measure the depth and atomic percentage of SiGe thin films for composition determination and quality assurance monitoring. The measurement accuracy is high, but SIMS machines are expensive and popular. Low cost and high measurement cost. In the case of outsourced analysis, if regular inspection of the production line is required, the process cost will increase sharply. [0003] In addition, X-ray characterization (EDS) has been proven to be a robust and reliable technique in principle and in the quantitative analysis of other materials (excluding SiGe thin films). Within the detectable rang...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/083G01N23/223G01N23/04
Inventor 陈建钢吴长亮
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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